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FDW2508PB

更新时间: 2024-11-19 03:36:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 461K
描述
FDW2508PB Dual P-Channel -1.8V Specified PowerTrench MOSFET -12V, -6A, 18mohm

FDW2508PB 技术参数

是否Rohs认证: 符合生命周期:Obsolete
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:12 V
最大漏极电流 (Abs) (ID):6 A最大漏极电流 (ID):6 A
最大漏源导通电阻:0.03 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1 W最大脉冲漏极电流 (IDM):30 A
认证状态:Not Qualified子类别:Other Transistors
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FDW2508PB 数据手册

 浏览型号FDW2508PB的Datasheet PDF文件第2页浏览型号FDW2508PB的Datasheet PDF文件第3页浏览型号FDW2508PB的Datasheet PDF文件第4页浏览型号FDW2508PB的Datasheet PDF文件第5页浏览型号FDW2508PB的Datasheet PDF文件第6页 
October 2006  
FDW2508PB  
Dual P-Channel 1.8V Specified PowerTrench® MOSFET  
12V, 6A, 18mΩ  
Features  
General Description  
This P-Channel –1.8V specified MOSFET uses Fairchild  
Semiconductor’s advanced low voltage PowerTrench®. It has  
been optimized for battery power management applications.  
„ Max rDS(on) = 18mat VGS = –4.5V, ID = –6A  
„ Max rDS(on) = 22mat VGS = –2.5V, ID = –5A  
„ Max rDS(on) = 30mat VGS = –1.8V, ID = –4A  
„ Low gate charge  
„ High performance trench technology for extremely low rDS(on)  
„ Low profile TSSOP-8 package  
Application  
„ Power management  
„ Load switch  
„ RoHS compliant  
„ Battery protection  
TSSOP8  
Pin 1  
MOSFET Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDS  
VGS  
Drain to Source Voltage  
Gate to Source Voltage  
Drain Current -Continuous  
-Pulsed  
–12  
V
V
±8  
(Note 1a)  
–6  
ID  
A
–30  
Power Dissipation-Dual Operation  
2
PD  
1.6  
1
W
Power Dissipation-Single Operation  
(Note 1a)  
(Note 1b)  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJA  
Thermal Resistance, Junction to Ambient  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1b)  
80  
°C/W  
125  
Package Marking and Ordering Information  
Device Marking  
Device  
Package  
Reel Size  
13’’  
Tape Width  
12mm  
Quantity  
2508PB  
FDW2508PB  
TSSOP-8  
2500 units  
1
©2006 Fairchild Semiconductor Corporation  
FDW2508PB Rev.B  
www.fairchildsemi.com  

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