Datasheet > FDW2503W

FDW2503W

更新时间： 2024-11-18 23:51:55

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
6页	153K
描述
TRANSISTOR \| MOSFET \| MATCHED PAIR \| N-CHANNEL \| 20V V(BR)DSS \| 5.5A I(D) \| SO

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中文翻译

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数据手册

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FDW2503W 数据手册

April 2000

PRELIMINARY

FDW2503N

Dual N-Channel 2.5V Specified PowerTrench^ÒMOSFET

General Description

Features

This N-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

· 5.5 A, 20 V. R_DS(ON)= 0.021 W @ V _GS= 4.5 V

R_DS(ON)= 0.035 W @ V _GS= 2.5 V

management applications with a wide range of gate

drive voltage (2.5V – 12V).

· Extended V_GSSrange (±12V) for battery applications

· Low gate charge

Applications

· Load switch

· High performance trench technology for extremely

low R_DS(ON)

· Motor drive

· DC/DC conversion

· Power management

· Low profile TSSOP-8 package

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

V_GSS

I_D

Gate-Source Voltage

Drain Current – Continuous

– Pulsed

±12

5.5

(Note 1a)

P_D

Power Dissipation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_qJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2503N

FDW2503N

13’’

12mm

3000 units

Ó2000 Fairchild Semiconductor Corporation

FDW2503N Rev C (W)

12 3 4 5 6

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