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FDW2502PZ PDF预览

FDW2502PZ

更新时间: 2024-11-18 22:31:47
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 90K
描述
Dual P-Channel 2.5V Specified PowerTrench MOSFET

FDW2502PZ 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSSOP包装说明:SMALL OUTLINE, R-PDSO-G8
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N其他特性:ESD PROTECTION
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4.4 A最大漏极电流 (ID):4.4 A
最大漏源导通电阻:0.035 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:MO-153AAJESD-30 代码:R-PDSO-G8
JESD-609代码:e0元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDW2502PZ 数据手册

 浏览型号FDW2502PZ的Datasheet PDF文件第2页浏览型号FDW2502PZ的Datasheet PDF文件第3页浏览型号FDW2502PZ的Datasheet PDF文件第4页浏览型号FDW2502PZ的Datasheet PDF文件第5页浏览型号FDW2502PZ的Datasheet PDF文件第6页 
March 2000  
PRELIMINARY  
FDW2502PZ  
Dual P-Channel 2.5V Specified PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel 2.5V specified MOSFET is a rugged  
gate version of Fairchild's Semiconductor’s advanced  
PowerTrench process. It has been optimized for power  
· –4.4 A, –20 V. RDS(ON) = 0.035 W @ V GS = –4.5 V  
RDS(ON) = 0.057 W @ V GS = –2.5 V.  
management applications with a wide range of gate  
drive voltage (2.5V –12V).  
· Extended VGSS range (±12V) for battery applications.  
· ESD protection diode (note 3).  
Applications  
· Load switch  
· High performance trench technology for extremely  
low RDS(ON)  
.
· Motor drive  
· DC/DC conversion  
· Power management  
· Low profile TSSOP-8 package.  
1
2
3
4
8
7
6
5
TSSOP-8  
Pin 1  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
Parameter  
Ratings  
Units  
VDSS  
Drain-Source Voltage  
–20  
V
VGSS  
ID  
Gate-Source Voltage  
±12  
–4.4  
V
A
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
–30  
PD  
Power Dissipation for Single Operation  
(Note 1a)  
(Note 1b)  
1.0  
W
0.6  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1b)  
125  
208  
°C/W  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
2502PZ  
FDW2502PZ  
13’’  
12mm  
3000 units  
Ó2000 Fairchild Semiconductor Corporation  
FDW2502PZ Rev. B (W)  

FDW2502PZ 替代型号

型号 品牌 替代类型 描述 数据表
FDW2502P FAIRCHILD

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