Datasheet > FDW2502P_03

FDW2502P_03

更新时间： 2024-11-19 03:36:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
5页	145K
描述
Dual P-Channel 2.5V Specified PowerTrench MOSFET

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FDW2502P_03 数据手册

December 2003

FDW2502P



Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild's Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V –12V).

• –4.4 A, –20 V. R_DS(ON)= 35 mΩ @ V_GS= –4.5 V

R_DS(ON)= 57 mΩ @ V_GS= –2.5 V.

• Extended V_GSSrange (±12V) for battery applications.

• High performance trench technology for extremely

Applications

low R_DS(ON)

• Load switch

• Low profile TSSOP-8 package.

• Motor drive

• DC/DC conversion

• Power management

TSSOP-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

Parameter

Ratings

–20

Units

V_DSS

Drain-Source Voltage

V_GSS

Gate-Source Voltage

±12

–4.4

–30

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

P_D

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

1.0

0.6

T_J, T_STG

Operating and Storage Junction Temperature Range

-55 to +150

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1b)

125

208

R_θJA

°C/W

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

2502P

FDW2502P

13’’

12mm

3000 units

FDW2502P Rev. F (W)

2003 Fairchild Semiconductor Corporation

12 3 4 5

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