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FDS8690 PDF预览

FDS8690

更新时间: 2024-11-23 10:32:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体小信号场效应晶体管开关光电二极管
页数 文件大小 规格书
6页 349K
描述
N-Channel PowerTrench MOSFET 30V, 14A, 7.6mOhm

FDS8690 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:SOIC
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.71
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):14 A
最大漏极电流 (ID):14 A最大漏源导通电阻:0.0076 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):120 pF
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):2.5 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDS8690 数据手册

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January 2006  
FDS8690  
N-Channel PowerTrench MOSFET  
®
30V, 14A, 7.6mΩ  
General Description  
Features  
„ Max rDS(on) = 7.6m, VGS = 10V, ID = 14A  
This N-Channel MOSFET has been designed specifically to  
improve the overall efficiency of DC/DC converters using  
either synchronous or conventional switching PWM  
controllers. It has been optimized for low gate charge, low  
„ Max rDS(on) = 11.4m, VGS = 4.5V, ID = 11.5A  
„ High performance trench technology for extremely low  
rDS(on) and fast switching  
„ Very low gate charge  
rDS(on) and fast switching speed.  
„ High power and current handling capability  
„ 100% RG tested  
Applications  
„ Notebook CPU power supply  
„ RoHS Compliant  
„ Synchronous rectifier  
Absolute Maximum Ratings TA = 25°C unless otherwise Noted  
Symbol  
VDS  
VGS  
Parameter  
Ratings  
30  
Units  
Drain to Source Voltage  
Gate to Source Voltage  
V
V
±20  
Drain Current  
-Continuous  
-Pulsed  
(Note 1a)  
14  
ID  
A
100  
EAS  
PD  
Single Pulse Avalanche Energy  
(Note 3)  
(Note 1a)  
(Note 1b)  
(Note 1c)  
210  
mJ  
Power Dissipation for Single Operation  
2.5  
1.2  
W
1.0  
TJ, TSTG  
Operating and Storage Temperature  
-55 to +150  
°C  
Thermal Characteristics  
RθJA  
RθJC  
Thermal Resistance, Junction to Ambient  
(Note 1a)  
(Note 1)  
50  
25  
°C/W  
°C/W  
Thermal Resistance, Junction to Case  
Package Marking and Ordering Information  
Device Marking  
Device  
FDS8690  
Reel Size  
Tape Width  
12mm  
Quantity  
2500 units  
FDS8690  
13”  
©2006 Fairchild Semiconductor Corporation  
FDS8690 Rev. B  
1
www.fairchildsemi.com  

FDS8690 替代型号

型号 品牌 替代类型 描述 数据表
BSO040N03MSG INFINEON

类似代替

OptiMOS™3 M-Series Power-MOSFET
SI4162DY-T1-GE3 VISHAY

功能相似

N-Channel 30-V (D-S) MOSFET
IRF8736PBF INFINEON

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HEXFET Power MOSFET

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