Datasheet > FDS8876_07

FDS8876_07

更新时间： 2024-11-26 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
12页	625K
描述
N-Channel PowerTrench㈢ MOSFET 30V, 12.5A, 8.2mヘ

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FDS8876_07 数据手册

April 2007

FDS8876

N-Channel PowerTrench^®MOSFET

30V, 12.5A, 8.2mΩ

Features

General Description

r_DS(on)= 8.2mΩ, V_GS= 10V, I_D= 12.5A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(on)= 10.2mΩ, V_GS= 4.5V, I_D= 11.4A

High performance trench technology for extremely low

r_DS(on)

r_DS(on)and fast switching speed.

Applications

Low gate charge

DC/DC converters

High power and current handling capability

RoHS Compliant

Branding Dash

SO-8

FDS8876 Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...12

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型号	品牌	获取价格	描述	数据表
FDS8876_NL	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDS8876-F40	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，12.5A，8.5mΩ
FDS8878	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDS8878	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，10.2A，14mΩ
FDS8878	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时
FDS8878_07	FAIRCHILD	获取价格	N-Channel PowerTrench㈢ MOSFET
FDS8878_NL	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET
FDS8878-F123	ONSEMI	获取价格	N 沟道，PowerTrench® MOSFET，30V，10.2A，14mΩ
FDS8880	ADI	获取价格	20 V, 6 A Synchronous Step-Down
FDS8880	FAIRCHILD	获取价格	N-Channel PowerTrench MOSFET