Datasheet > FDS8874_07

FDS8874_07

更新时间： 2024-11-23 04:18:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
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描述
N-Channel PowerTrench MOSFET

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数据手册

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FDS8874_07 数据手册

April 2007

FDS8874

N-Channel PowerTrench^®MOSFET

30V, 16A, 5.5mΩ

Features

General Description

r_DS(on)= 5.5mΩ, V_GS= 10V, I_D= 16A

This N-Channel MOSFET has been designed specifically to

improve the overall efficiency of DC/DC converters using

either synchronous or conventional switching PWM

controllers. It has been optimized for low gate charge, low

r_DS(on)= 7.0mΩ, V_GS= 4.5V, I_D= 15A

High performance trench technology for extremely low

r_DS(on)

r_DS(on)and fast switching speed.

Applications

Low gate charge

DC/DC converters

High power and current handling capability

100% Rg tested

RoHS Compliant

SO-8

Pin 1

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

±20

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

Continuous (T_A= 25^oC, V_GS= 10V, R_θJA= 50^oC/W)

Continuous (T_A= 25^oC, V_GS= 4.5V, R_θJA= 50^oC/W)

Pulsed

115

I_D

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

265

2.5

P_D

Derate above 25^oC

mW/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 150

Thermal Characteristics

R_θJC

R_θJA

Thermal Resistance, Junction to Case (Note 2)

125

^oC/W

Thermal Resistance, Junction to Ambient (Note 2a)

Thermal Resistance, Junction to Ambient (Note 2b)

Package Marking and Ordering Information

Device Marking

Device

Package

Reel Size

330mm

Tape Width

12mm

Quantity

2500 units

FDS8874

SO-8

FDS8874 Rev. B

www.fairchildsemi.com

12 3 4 5 6 7...11

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