Datasheet > FDS8878

FDS8878

更新时间： 2024-11-24 17:15:55

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
9页	593K
描述
种类:N-Channel;漏源电压（Vdss）:30V;持续漏极电流（Id）（在25°C时）:10.2A;Vgs(th)(V):±20;漏源导通电阻:14mΩ@10V;漏源导通电阻:17mΩ@4.5V

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FDS8878 数据手册

UMW

FDS8878

30V N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed

specifically to improve the overall efficiency of

DC/DC converters using either synchronous

or conventional switching PWM controllers. It

has been optimized for low gate charge, low

r_DS(on)and fast switching speed.

Applications

DC/DC converters

•

SOP-8

Features

•

VDS (V) =30V

•

ID= 10.2A

(V = 10V)

•

RDS(ON) ＜14m

•

Ω(V

=10V)

•

RDS(ON) ＜ 17 m

Ω(V

•

=4.5V)

•

High performance trench technology for

extremely low r_DS(on)

•

Low gate charge

•

High power and current handling capability

RoHS Compliant

•

MOSFET Maximum Ratings T_A= 25°C unless otherwise noted

Symbol

V_DSS

V_GS

Parameter

Ratings

Units

Drain to Source Voltage

Gate to Source Voltage

Drain Current

±20

Continuous (T_A= 25^oC, V_GS= 10V, R_θJA= 50^oC/W)

Continuous (T_A= 25^oC, V_GS= 4.5V, R_θJA= 50^oC/W)

Pulsed

10.2

9.3

I_D

E_AS

Single Pulse Avalanche Energy (Note 1)

Power dissipation

Derate above 25^oC

2.5

P_D

mW/^oC

^oC

T_J, T_STG

Operating and Storage Temperature

-55 to 150

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5 6 7...9

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