Datasheet > FDR54LT1G

FDR54LT1G

更新时间： 2024-11-07 01:15:11

品牌	Logo	应用领域
FS		/
页数	文件大小	规格书
3页	123K
描述
Schottky Barrier Diodes

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FDR54LT1G 数据手册

SEMICONDUCTOR

FDR54

TECHNICAL DATA

Schottky

Barrier Diodes

These Schottky barrier diodes are designed for high speed switching applications,

circuit protection, and voltage clamping. Extremely low forward voltage reduces

conduction loss. Miniature surface mount package is excellent for hand held and

portable applications where space is limited.

•

Extremely Fast Switching Speed

Low Forward Voltage — 0.35 Volts (Typ) @ I = 10 mAdc

We declare that the material of product

compliance with RoHS requirements.

SOT –23

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

CATHODE

ANODE

FDR54LT1G

3000/Tape&Reel

FDR54LT3G

JV3

10000/Tape&Reel

MAXIMUM RATINGS (T = 125°C unless otherwise noted)

Rating

Reverse Voltage

Symbol

Value

Unit

Volts

Forward Power Dissipation

@ T = 25°C

225

2.0

mW/°C

Derate above 25°C

Forward Current (DC)

Junction Temperature

Storage Temperature Range

200 Max

125 Max

°C

stg

–55 to +150

°C

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Reverse Breakdown Voltage (I = 10 µA)

Symbol

Min

—

Typ

—

Max

—

Unit

Volts

(BR)R

Total Capacitance (V = 1.0 V, f = 1.0 MHz)

7.6

0.5

Reverse Leakage (V = 25 V)

—

2.0

0.24

0.5

1.0

5.0

µAdc

Vdc

Forward Voltage (I = 0.1 mAdc)

—

0.22

0.41

0.52

—

Forward Voltage (I = 30 mAdc)

Forward Voltage (I = 100 mAdc)

Reverse Recovery Time

(I = I = 10 mAdc, I

= 1.0 mAdc) Figure 1

R(REC)

Forward Voltage (I = 1.0 mAdc)

—

0.29

0.35

—

0.32

0.40

200

300

600

Vdc

Forward Voltage (I = 10 mAdc)

Forward Current (DC)

mAdc

Repetitive Peak Forward Current

—

FRM

Non–Repetitive Peak Forward Current (t < 1.0 s)

—

FSM

2011. 07. 13

Revision No : 0

1/3

12 3

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