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FDMA1027P_06 PDF预览

FDMA1027P_06

更新时间: 2022-04-23 23:00:11
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
7页 372K
描述
Dual P-Channel PowerTrench MOSFET

FDMA1027P_06 数据手册

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Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain-Source Breakdown Voltage  
VGS = 0V, ID = -250µA  
-20  
-
-
-
-
V
BVDSS  
TJ  
Breakdown Voltage Temperature  
Coefficient  
ID = -250µA,  
Referenced to 25°C  
-12  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate-Body Leakage,  
VDS = -16V, VGS = 0V  
-
-
-
-
-1  
µA  
VGS = ±8V, VDS = 0V  
±100  
nA  
On Characteristics (Note 2)  
VGS(th)  
Gate Threshold Voltage  
VDS = VGS, ID = -250µA  
-0.4  
-
-0.7  
2
-1.3  
V
VGS(th)  
TJ  
Gate Threshold Voltage  
Temperature Coefficient  
ID = -250µA,  
Referenced to 25°C  
-
mV/°C  
VGS = -4.5V, ID = -3.0A  
VGS = -2.5V, ID = -2.5A  
VGS = -1.8V, ID = -1.0A  
-
-
-
90  
120  
160  
240  
120  
172  
RDS(ON)  
Static Drain-Source On-Resistance  
mΩ  
VGS = -4.5V, ID = -3.0A  
TJ = 125°C  
-
118  
160  
ID(on)  
gFS  
On-State Drain Current  
VGS = -4.5V, VDS = -5V  
VDS = -5V, ID = -3.0A  
-20  
-
-
-
-
A
S
Forward Transconductance  
7
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Input Capacitance  
-
-
-
435  
80  
-
-
-
pF  
pF  
pF  
VDS = -10V, VGS = 0V,  
f = 1.0MHz  
Output Capacitance  
Reverse Transfer Capacitance  
45  
Switching Characteristics (Note 2)  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Turn-On Rise Time  
Turn-Off Delay Time  
Turn-Off Fall Time  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
-
-
-
-
-
-
-
9
11  
15  
6
18  
19  
27  
12  
6
ns  
ns  
VDD = -10V, ID = -1A  
VGS = -4.5V, RGEN = 6Ω  
ns  
ns  
Qg  
4
nC  
nC  
nC  
VDS = -10V, ID = -3.0A,  
VGS = -4.5V  
Qgs  
Qgd  
0.8  
0.9  
-
-
Drain-Source Diode Characteristics and Maximum Ratings  
IS  
Maximum Continuous Drain-Source Diode Forward Current  
-
-
-
-
-
-0.8  
17  
6
-1.1  
A
V
VSD  
trr  
Drain-Source Diode Forward Voltage  
Diode Reverse Recovery Time  
VGS = 0V, IS = -1.1 A (Note 2)  
-1.2  
-
-
ns  
nC  
IF= -3.0A, dIF/dt=100A/µs  
Qrr  
Diode Reverse Recovery Charge  
2
FDMA1027P Rev. D (W)  

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