Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0V, ID = -250µA
-20
-
-
-
-
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = -250µA,
Referenced to 25°C
-12
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate-Body Leakage,
VDS = -16V, VGS = 0V
-
-
-
-
-1
µA
VGS = ±8V, VDS = 0V
±100
nA
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = -250µA
-0.4
-
-0.7
2
-1.3
V
∆VGS(th)
∆TJ
Gate Threshold Voltage
Temperature Coefficient
ID = -250µA,
Referenced to 25°C
-
mV/°C
VGS = -4.5V, ID = -3.0A
VGS = -2.5V, ID = -2.5A
VGS = -1.8V, ID = -1.0A
-
-
-
90
120
160
240
120
172
RDS(ON)
Static Drain-Source On-Resistance
mΩ
VGS = -4.5V, ID = -3.0A
TJ = 125°C
-
118
160
ID(on)
gFS
On-State Drain Current
VGS = -4.5V, VDS = -5V
VDS = -5V, ID = -3.0A
-20
-
-
-
-
A
S
Forward Transconductance
7
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
-
-
-
435
80
-
-
-
pF
pF
pF
VDS = -10V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
45
Switching Characteristics (Note 2)
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
-
-
-
-
-
-
-
9
11
15
6
18
19
27
12
6
ns
ns
VDD = -10V, ID = -1A
VGS = -4.5V, RGEN = 6Ω
ns
ns
Qg
4
nC
nC
nC
VDS = -10V, ID = -3.0A,
VGS = -4.5V
Qgs
Qgd
0.8
0.9
-
-
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
-
-
-
-
-
-0.8
17
6
-1.1
A
V
VSD
trr
Drain-Source Diode Forward Voltage
Diode Reverse Recovery Time
VGS = 0V, IS = -1.1 A (Note 2)
-1.2
-
-
ns
nC
IF= -3.0A, dIF/dt=100A/µs
Qrr
Diode Reverse Recovery Charge
2
FDMA1027P Rev. D (W)