5秒后页面跳转
FDD86540 PDF预览

FDD86540

更新时间: 2024-10-28 12:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 247K
描述
N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ

FDD86540 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3/2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.94
Samacsys Description:N-Channel Power Trench MOSFET 60V 136 A 4.1 M ohm雪崩能效等级(Eas):228 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):21.5 A最大漏源导通电阻:0.0041 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):127 W最大脉冲漏极电流 (IDM):120 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD86540 数据手册

 浏览型号FDD86540的Datasheet PDF文件第1页浏览型号FDD86540的Datasheet PDF文件第2页浏览型号FDD86540的Datasheet PDF文件第4页浏览型号FDD86540的Datasheet PDF文件第5页浏览型号FDD86540的Datasheet PDF文件第6页 
Typical Characteristics TJ = 25 °C unless otherwise noted  
8
6
4
2
0
120  
V
= 10 V  
= 8 V  
GS  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
V
= 6 V  
GS  
V
VGS = 5 V  
GS  
90  
60  
30  
0
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
VGS = 5.5 V  
VGS = 6 V  
V
= 5.5 V  
GS  
VGS = 8 V  
V
= 5 V  
VGS = 10 V  
GS  
0
1
2
3
4
5
0
30  
60  
90  
120  
ID, DRAIN CURRENT (A)  
VDS, DRAIN TO SOURCE VOLTAGE (V)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
20  
1.7  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
ID = 21.5 A  
VGS = 10 V  
1.6  
1.5  
1.4  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
ID = 21.5 A  
15  
10  
5
TJ = 125 o  
C
TJ = 25 o  
C
0
-75 -50 -25  
0
25 50 75 100 125 150  
4
5
6
7
8
9
10  
TJ, JUNCTION TEMPERATURE (oC)  
VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
120  
200  
100  
VGS = 0 V  
PULSE DURATION = 80 μs  
DUTY CYCLE = 0.5% MAX  
10  
90  
60  
30  
0
VDS = 5 V  
TJ = 150 o  
C
1
TJ = 25 oC  
TJ = 150 o  
C
0.1  
TJ = 25 o  
C
TJ = -55 o  
C
0.01  
TJ = -55 o  
C
0.001  
2
3
4
5
6
7
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
©2012 Fairchild Semiconductor Corporation  
FDD86540 Rev. C  
3
www.fairchildsemi.com  

与FDD86540相关器件

型号 品牌 获取价格 描述 数据表
FDD86567-F085 ONSEMI

获取价格

60 V、100 A、2.6 mΩ、DPAKN 沟道 PowerTrench®
FDD86569 ONSEMI

获取价格

Power Field-Effect Transistor
FDD86569-F085 ONSEMI

获取价格

N 沟道 PowerTrench® MOSFET 60 V,90 A,5.7 mΩ
FDD86580-F085 ONSEMI

获取价格

60 V N 沟道 PowerTrench® MOSFET
FDD86581-F085 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,60 V,25 A,15 mΩ
FDD8750 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET 25V, 2.7A, 40mohm
FDD8770 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET 25V, 35A, 4.0mOHM
FDD8770 ONSEMI

获取价格

N 沟道,PowerTrench® MOSFET,25V,35A,4.0mΩ
FDD8778 FAIRCHILD

获取价格

N-Channel PowerTrench MOSFET 25V, 35A, 14mohm
FDD8778 ONSEMI

获取价格

N 沟道 PowerTrench® MOSFET 25V,35A,14mΩ