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FDD86540 PDF预览

FDD86540

更新时间: 2024-10-28 12:23:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
6页 247K
描述
N-Channel PowerTrench® MOSFET 60 V, 50 A, 4.1 mΩ

FDD86540 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:ROHS COMPLIANT, DPAK-3/2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:7.94
Samacsys Description:N-Channel Power Trench MOSFET 60V 136 A 4.1 M ohm雪崩能效等级(Eas):228 mJ
外壳连接:DRAIN配置:SINGLE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):21.5 A最大漏源导通电阻:0.0041 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):127 W最大脉冲漏极电流 (IDM):120 A
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FDD86540 数据手册

 浏览型号FDD86540的Datasheet PDF文件第1页浏览型号FDD86540的Datasheet PDF文件第3页浏览型号FDD86540的Datasheet PDF文件第4页浏览型号FDD86540的Datasheet PDF文件第5页浏览型号FDD86540的Datasheet PDF文件第6页 
Electrical Characteristics TJ = 25 °C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Typ  
Max  
Units  
Off Characteristics  
BVDSS  
Drain to Source Breakdown Voltage  
ID = 250 μA, VGS = 0 V  
60  
V
ΔBVDSS  
ΔTJ  
Breakdown Voltage Temperature  
Coefficient  
I
D = 250 μA, referenced to 25 °C  
28  
mV/°C  
IDSS  
IGSS  
Zero Gate Voltage Drain Current  
Gate to Source Leakage Current  
VDS = 48 V, VGS = 0 V  
VGS = ±20 V, VDS = 0 V  
1
μA  
±100  
nA  
On Characteristics  
VGS(th)  
Gate to Source Threshold Voltage  
VGS = VDS, ID = 250 μA  
2
3.1  
-11  
4
V
ΔVGS(th)  
ΔTJ  
Gate to Source Threshold Voltage  
Temperature Coefficient  
I
D = 250 μA, referenced to 25 °C  
mV/°C  
V
GS = 10 V, ID = 21.5 A  
3.4  
4.1  
5.2  
75  
4.1  
5
rDS(on)  
gFS  
Static Drain to Source On Resistance  
Forward Transconductance  
VGS = 8 V, ID = 19.5 A  
mΩ  
VGS = 10 V, ID = 21.5 A, TJ = 125 °C  
VDS = 10 V, ID = 21.5 A  
6.3  
S
Dynamic Characteristics  
Ciss  
Coss  
Crss  
Rg  
Input Capacitance  
4767  
1409  
48  
6340  
1880  
90  
pF  
pF  
pF  
Ω
VDS = 30 V, VGS = 0 V,  
f = 1 MHz  
Output Capacitance  
Reverse Transfer Capacitance  
Gate Resistance  
0.6  
Switching Characteristics  
td(on)  
tr  
td(off)  
tf  
Turn-On Delay Time  
Rise Time  
26  
15  
31  
6.9  
65  
54  
23  
12  
42  
28  
49  
14  
90  
75  
ns  
ns  
VDD = 30 V, ID = 21.5 A,  
V
GS = 10 V, RGEN = 6 Ω  
Turn-Off Delay Time  
Fall Time  
ns  
ns  
Qg  
Total Gate Charge  
Total Gate Charge  
Gate to Source Charge  
Gate to Drain “Miller” Charge  
VGS = 0 V to 10 V  
VGS = 0 V to 8 V  
nC  
nC  
nC  
nC  
Qg  
VDD = 30 V,  
D = 21.5 A  
I
Qgs  
Qgd  
Drain-Source Diode Characteristics  
V
GS = 0 V, IS = 21.5 A  
(Note 2)  
(Note 2)  
0.8  
0.7  
56  
1.3  
1.2  
90  
V
V
VSD  
Source-Drain Diode Forward Voltage  
VGS = 0 V, IS = 2.6 A  
trr  
Reverse Recovery Time  
ns  
nC  
IF = 21.5 A, di/dt = 100 A/μs  
Qrr  
Reverse Recovery Charge  
43  
69  
Notes:  
1: R  
R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.  
θJA  
θJC  
is guaranteed by design while R  
is determined by the user’s board design.  
θJA  
b) 96 °C/W when mounted on  
a minimum pad  
a) 40 °C/W when mounted on a  
1 in pad of 2 oz copper  
2
2: Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.  
3: Starting T = 25 °C, L = 0.3 mH, I = 39 A, V = 54 V, V = 10 V.  
J
AS  
DD  
GS  
©2012 Fairchild Semiconductor Corporation  
FDD86540 Rev. C  
2
www.fairchildsemi.com  

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