型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCH30E10 | KYOCERA AVX |
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Schottky barrier diodes are not PN junctions, but diodes that utilize potential barriers b | |
FCH30U10 | NIEC |
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Rectifier Diode, Schottky, 1 Phase, 2 Element, 30A, 100V V(RRM), Silicon | |
FCH30U15 | NIEC |
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Schottky Barrier Diode | |
FCH35N60 | FAIRCHILD |
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N-Channel SuperFET® MOSFET | |
FCH35N60 | ONSEMI |
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功率 MOSFET,N 沟道,SUPERFET®,Easy Drive,600 V,35 | |
FCH47N60 | FAIRCHILD |
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600V N-Channel MOSFET | |
FCH47N60_06 | FAIRCHILD |
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new generation of high voltage MOSFET | |
FCH47N60_07 | FAIRCHILD |
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600V N-Channel MOSFET | |
FCH47N60_13 | FAIRCHILD |
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N-Channel SuperFET MOSFET | |
FCH47N60_F085 | FAIRCHILD |
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Power Field-Effect Transistor, 47A I(D), 600V, 0.079ohm, 1-Element, N-Channel, Silicon, Me |