Datasheet > FCH47N60_13

FCH47N60_13

更新时间： 2024-09-17 12:33:55

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描述
N-Channel SuperFET MOSFET

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FCH47N60_13 数据手册

May 2013

FCH47N60

N-Channel SuperFET MOSFET

600 V, 47 A, 70 m

Features

Description

•

650 V atT_J= 150°C

The FCH47N60 SuperFET^®MOSFET is Fairchild Semiconduc-

tor’s first generation of high-voltage super-junction (SJ) MOSFET

family that utilizes charge-balance technology for outstanding

low on-resistance and lower gate charge performance. This tech-

nology is tailored to minimize conduction loss and provide supe-

rior switching performance, dv/dt rate, and avalanche energy.

This SuperFET MOSFET is suitable for the switching power

applications such as PFC, server/telecom power, FPD TV power,

ATX power, and industrial power.

Typ. R_DS(on)= 58 m

Ultra-Low Gate Charge (Typ. Q_g= 210 nC)

Low Effective Output Capacitance (Typ. C_osseff. = 420 pF)

100% Avalanche Tested

RoHS Compliant

Applications

•

Solar Inverter

•

AC-DC Power Supply

TO-247

MOSFET Maximum Ratings T_C= 25°C unless otherwise noted*

Symbol

V_DSS

Parameter

FCH47N60_F133

Unit

Drain to Source Voltage

Drain Current

600

Continuous (T_C= 25°C)

Continuous (T_C= 100°C)

Pulsed

I_D

29.7

141

I_DM

Drain Current

(Note 1)

V_GSS

E_AS

I_AR

Gate to Source Voltage

Single Pulsed Avalanche Energy

Avalanche Current

±30

(Note 2)

(Note 1)

(Note 3)

1800

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

41.7

4.5

V/ns

(T_C= 25°C)

417

P_D

Power Dissipation

Derate above 25°C

3.33

-55 to +150

W/°C

°C

T_J, T_STG

T_L

Operating and Storage Temperature Range

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

300

°C

*Drain current limited by maximum junction temperature.

Thermal Characteristics

Symbol

R_JC

Parameter

Typ.

Max.

Unit

°C/W

Thermal Resistance, Junction to Case, Maximum

Thermal Resistance, Case-to-Sink

0.3

R_JA

0.24

Thermal Resistance, Junction to Ambient, Maximum

41.7

FCH47N60 Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7 8

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