Datasheet > FCH47N60F_0605

FCH47N60F_0605

更新时间： 2024-09-17 03:36:19

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	978K
描述
600V N-Channel MOSFET

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FCH47N60F_0605 数据手册

May 2006

SuperFET^TM

FCH47N60F

600V N-Channel MOSFET

Features

Description

•

650V @T_J= 150°C

SuperFET^TMis, Farichild’s proprietary, new generation of high

voltage MOSFET family that is utilizing an advanced charge

balance mechanism for outstanding low on-resistance and

lower gate charge performance.

Typ. R_DS(on)= 0.062Ω

Fast Recovery Type ( t_rr= 240ns)

Ultra Low Gate Charge (typ. Q_g= 210nC)

Low Effective Output Capacitance (typ. C_osseff. = 420pF)

100% avalanche tested

This advanced technology has been tailored to minimize

conduction loss, provide superior switching performance, and

withstand extreme dv/dt rate and higher avalanche energy.

Consequently, SuperFET is very suitable for various AC/DC

power conversion in switching mode operation for system

miniaturization and higher efficiency.

TO-247

Absolute Maximum Ratings

Symbol

Parameter

FCH47N60F

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

29.7

(Note 1)

I_DM

Drain Current

- Pulsed

141

± 30

1800

V_GSS

E_AS

I_AR

Gate-Source voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

41.7

V/ns

Power Dissipation

(T_C= 25°C)

417

- Derate above 25°C

3.33

W/°C

T_J,T_STG

T_L

Operating and Storage Temperature Range

-55 to +150

300

°C

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

°C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

0.3

Unit

°C/W

R_θJC

R_θCS

R_θJA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.24

Thermal Resistance, Junction-to-Ambient

41.7

FCH47N60F Rev. B

www.fairchildsemi.com

12 3 4 5 6 7 8

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FCH47N60F-F133	FAIRCHILD	获取价格	DESIGN/PROCESS CHANGE NOTIFICATION
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