是否无铅: | 不含铅 | 生命周期: | Not Recommended |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.19 | 雪崩能效等级(Eas): | 810 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 47 A | 最大漏极电流 (ID): | 47 A |
最大漏源导通电阻: | 0.075 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-247 | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 417 W |
参考标准: | AEC-Q101 | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FCH47N60F-F133 | FAIRCHILD |
获取价格 |
DESIGN/PROCESS CHANGE NOTIFICATION | |
FCH47N60F-F133 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,SUPERFET®,FRFET®, 600 V,47 A,7 | |
FCH47N60N | FAIRCHILD |
获取价格 |
N-Channel MOSFET | |
FCH47N60N | ONSEMI |
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功率 MOSFET,N 沟道,SUPREMOS®,FAST,600 V,47 A,62 m | |
FCH47N60N_1112 | FAIRCHILD |
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N-Channel MOSFET | |
FCH47N60NF | FAIRCHILD |
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N-Channel MOSFET, FRFET | |
FCH47N60NF | ONSEMI |
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功率 MOSFET,N 沟道,SUPREMOS®,FRFET®, 600 V,45.8 A | |
FCH76N60N | FAIRCHILD |
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N-Channel MOSFET | |
FCH76N60N | ONSEMI |
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功率 MOSFET,N 沟道,SUPREMOS®,FAST,600V,76A,36mΩ,T | |
FCH76N60N_1112 | FAIRCHILD |
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N-Channel MOSFET |