Datasheet > FCH47N60F_13

FCH47N60F_13

更新时间： 2024-09-17 12:33:55

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	290K
描述
N-Channel SuperFET FRFET MOSFET

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FCH47N60F_13 数据手册

May 2013

FCH47N60F

N-Channel SuperFET FRFET MOSFET

600 V, 47 A, 73 m

Features

Description

•

650 V @TJ = 150 C

SuperFET MOSFET is Fairchild Semiconductor ’s first gener-

ation of high voltage super-junction (SJ) MOSFET family that is

utilizing charge balance technology for outstanding low on-

resistance and lower gate charge performance.This technology

is tailored to minimize conduction loss, provide superior switch-

ing performance,dv/dt rate and higher avalanche energy. Con-

sequently, SuperFET MOSFET is very suitable for the switching

power applications such as PFC, server / telecom power, FPD

TV power, ATX power and industrial power applications. Super-

Typ. R_DS(on)= 58 m

Ultra Low Gate Charge (Typ. Q_g= 210 nC)

Low Effective Output Capacitance (Typ. C_osseff. = 420 pF)

100% Avalanche Tested

RoHS Compliant

FET FRFET MOSFET’s optimized body diode reverse recov-

ery performance can remove additional component and

improve system reliability.

Applications

•

Solar Inverter

•

AC-DC Power Supply

TO-247

Absolute Maximum Ratings

Symbol

Parameter

FCH47N60F_F133

Unit

V_DSS

Drain-Source Voltage

Drain Current

600

I_D

- Continuous (T_C= 25C)

- Continuous (T_C= 100C)

29.7

(Note 1)

I_DM

Drain Current

- Pulsed

141

 30

1800

V_GSS

E_AS

I_AR

Gate-Source voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

41.7

V/ns

Power Dissipation

(T_C= 25C)

417

- Derate above 25C

3.33

W/C

_J,T_STG

Operating and Storage Temperature Range

-55 to +150

300

C

T_L

Maximum Lead Temperature for Soldering Purpose,

1/8” from Case for 5 Seconds

C

Thermal Characteristics

Symbol

Parameter

Typ.

Max.

Unit

C/W

°C/W

C/W

R_JC

R_CS

R_JA

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

0.3

0.24

Thermal Resistance, Junction-to-Ambient

41.7

FCH47N60F Rev. C1

www.fairchildsemi.com

12 3 4 5 6 7 8

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与FCH47N60F_13相关器件

型号	品牌	获取价格	描述	数据表
FCH47N60F_F133	FAIRCHILD	获取价格	N-Channel SuperFET FRFET MOSFET
FCH47N60-F085	ONSEMI	获取价格	600 V、47 A、64 mΩ、TO-247N 沟道 SuperFET™
FCH47N60-F133	FAIRCHILD	获取价格	DESIGN/PROCESS CHANGE NOTIFICATION
FCH47N60-F133	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET®，Easy Drive，600 V，47
FCH47N60F-F085	ONSEMI	获取价格	600 V、47 A、66 mΩ、TO-247N 沟道 SuperFET™
FCH47N60F-F133	FAIRCHILD	获取价格	DESIGN/PROCESS CHANGE NOTIFICATION
FCH47N60F-F133	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPERFET®，FRFET®， 600 V，47 A，7
FCH47N60N	FAIRCHILD	获取价格	N-Channel MOSFET
FCH47N60N	ONSEMI	获取价格	功率 MOSFET，N 沟道，SUPREMOS®，FAST，600 V，47 A，62 m
FCH47N60N_1112	FAIRCHILD	获取价格	N-Channel MOSFET