SENSITRON
ES1A – ES1M
SEMICONDUCTOR
1.0A SURFACE MOUNT SUPER FAST RECTIFIER
Data Sheet 2621, Rev. A
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Features
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Glass Passivated Die Construction
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Ideally Suited for Automatic Assembly
Low Forward Voltage Drop, High Efficiency
Surge Overload Rating to 30A Peak
Low Power Loss
Super-Fast Recovery Time
Plastic Case Material has UL Flammability
Classification Rating 94V-O
B
A
F
C
H
G
E
SMA/DO-214AC
Mechanical Data
Dim Min Max Min
Max
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Case: Low Profile Molded Plastic
Terminals: Solder Plated, Solderable
A
B
C
D
E
F
2.50 2.90 0.098 0.114
4.00 4.60 0.157 0.181
1.40 1.60 0.055 0.063
0.152 0.305 0.006 0.012
4.80 5.28 0.189 0.208
2.00 2.44 0.079 0.096
0.051 0.203 0.002 0.008
0.76 1.52 0.030 0.060
per MIL-STD-750, Method 2026
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
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G
H
Weight: 0.064 grams (approx.)
In mm
In inch
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Characteristic
Symbol ES1A ES1B ES1C ES1D ES1E ES1G ES1J ES1K ES1M Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
50
35
100
70
150
105
200
140
300
400
280
600
420
800 1000
V
RMS Reverse Voltage
VR(RMS)
IO
210
1.0
560
700
V
A
Average Rectified Output Current
@TL = 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
IFSM
30
A
Forward Voltage
@IF = 1.0A
VFM
IRM
0.975
1.35
60
1.60
100
V
Peak Reverse Current
At Rated DC Blocking Voltage
@TA = 25°C
@TA = 100°C
5.0
500
µA
Reverse Recovery Time (Note 1)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 3)
trr
Cj
50
nS
pF
45
35
RθJL
Tj, TSTG
K/W
°C
Operating and Storage Temperature Range
-50 to +150
Note: 1. Measured with IF = 0.5A, IR = 1.0A, Irr = 0.25A,
2. Measured at 1.0 MHz and applied reverse voltage of 4.0 V DC.
3. Mounted on P.C. Board with 8.0mm2 land area.
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