Datasheet > ES1PAE3

ES1PAE3

更新时间： 2024-10-30 21:18:31

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
2页	58K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM),

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技术参数
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ES1PAE3 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.84
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.865 V	最大非重复峰值正向电流：	30 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	1 A	最大重复峰值反向电压：	50 V
最大反向恢复时间：	0.03 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

ES1PAE3 数据手册

ES1PA thru ES1PD

Vishay Semiconductors

New Product

formerly General Semiconductor

Surface Mount Ultrafast Switching Plastic Rectifiers

Reverse Voltage 50 to 200 V

Case Style SMP

Forward Current 1.0 A

Reverse Recovery Time 15 ns

Cathode band

Features

• Very low profile - typical height of 1.0mm

• For surface mount application

0.086 (2.18)

0.074 (1.88)

• Glass passivated chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power loss

• Built in strain relief, ideal for automated placement

• High temperature soldering:

0.142 (3.61)

0.126 (3.19)

0.158 (4.00)

0.146 (3.70)

260°C maximum/10 seconds at terminals

Mechanical Data

Case: SMP

Terminals: Matte Tin plated (E3 Suffix),

solderable per MIL-STD-750, Method 2026

Polarity: Color band denotes cathode end

Weight: 0.0009 oz., 0.024 g

0.013 (0.35)

0.004 (0.10)

0.045 (1.15)

0.033 (0.85)

0.012 (0.30)

0.000 (0.00)

Epoxy meets UL 94V-0 flammability rating

0.018 (0.45)

0.006 (0.15)

Mounting Pad Layout

Dimensions in inches

and (millimeters)

0.030

(0.762)

0.012 (0.30) REF

0.105

(2.67)

0.025

(0.635)

0.053 (1.35)

0.041 (1.05)

0.036 (0.91)

0.024 (0.61)

0.050

(1.27)

0.100

(2.54)

0.032 (0.80)

0.016 (0.40)

0.103 (2.60)

0.087 (2.20)

Maximum Ratings & Thermal Characteristics (T_A= 25°C unless otherwise noted.)

Parameter

Symbol

ES1PA

ES1PB

ES1PC

ES1PD

Unit

Device marking code

Maximum reverse voltage

Maximum average forward rectified current see Fig.1

Peak forward surge current 10ms single half sine-wave

superimposed on rated load

V_RM

I_F(AV)

100

150

200

1.0

I_FSM

R_θJA

R_θJL

R_θJC

105

Typical thermal resistance ⁽¹⁾

°C/W

°C

Operating junction and Storage temperature range

T_J, T_STG

–55 to +150

Electrical Characteristics (T_A= 25°C unless otherwise noted.)

Parameter

Symbol

Value

Unit

Maximum instantaneous forward voltage⁽²⁾at I_F=0.6A, T_J=25°C

at I_F=1A, T_J=25°C

0.865

0.920

V_F

Maximum reverse current

T_J= 25°C

T_J=125°C

5.0

I_R

trr

µA

at rated VRM⁽²⁾

500

Maximum reverse recovery time at I_F=0.5A, I_R=1A, I_rr=0.25A

Typical reverse recovery time at T_J=25°C

at I_F= 1.0A, V_R= 30V dv/dt = 50A/µs, I_rr= 10% IRM T_J=100°C

Typical reverse recovery time at

T_J=25°C

Qrr

C_J

at I_F= 1.0A, V_R= 30V dv/dt = 50A/µs, I_rr= 10% IRM T_J=100°C

Typical junction capacitance at 4.0V, 1MHz

Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. R_θJLis measured at the ter-

minal of cathode band. R_θJCis measured at the top centre of the body

(2) Pulse test: 300µs pulse width, 1% duty cycle

Document Number 88918

04-Aug-04

www.vishay.com

中文翻译

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与ES1PAE3相关器件

型号	品牌	获取价格	描述	数据表
ES1PB	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB_11	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB_15	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PB-E3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PB-HE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PBHE3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S
ES1PBHE3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S
ES1PB-HE3/85A	VISHAY	获取价格	1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN
ES1PBHM3-84A	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers

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