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ES1PAE3 PDF预览

ES1PAE3

更新时间: 2024-02-03 16:35:58
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
2页 58K
描述
Rectifier Diode, 1 Element, 1A, 50V V(RRM),

ES1PAE3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.84
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.865 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:50 V
最大反向恢复时间:0.03 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

ES1PAE3 数据手册

 浏览型号ES1PAE3的Datasheet PDF文件第2页 
ES1PA thru ES1PD  
Vishay Semiconductors  
New Product  
formerly General Semiconductor  
Surface Mount Ultrafast Switching Plastic Rectifiers  
Reverse Voltage 50 to 200 V  
Case Style SMP  
Forward Current 1.0 A  
Reverse Recovery Time 15 ns  
Cathode band  
Features  
• Very low profile - typical height of 1.0mm  
• For surface mount application  
0.086 (2.18)  
0.074 (1.88)  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power loss  
• Built in strain relief, ideal for automated placement  
• High temperature soldering:  
0.142 (3.61)  
0.126 (3.19)  
0.158 (4.00)  
0.146 (3.70)  
260°C maximum/10 seconds at terminals  
Mechanical Data  
Case: SMP  
Terminals: Matte Tin plated (E3 Suffix),  
solderable per MIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Weight: 0.0009 oz., 0.024 g  
0.013 (0.35)  
0.004 (0.10)  
0.045 (1.15)  
0.033 (0.85)  
0.012 (0.30)  
0.000 (0.00)  
Epoxy meets UL 94V-0 flammability rating  
0.018 (0.45)  
0.006 (0.15)  
Mounting Pad Layout  
Dimensions in inches  
and (millimeters)  
0.030  
(0.762)  
0.012 (0.30) REF  
0.105  
(2.67)  
0.025  
(0.635)  
0.053 (1.35)  
0.041 (1.05)  
0.036 (0.91)  
0.024 (0.61)  
0.050  
(1.27)  
0.100  
(2.54)  
0.032 (0.80)  
0.016 (0.40)  
0.103 (2.60)  
0.087 (2.20)  
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
ES1PA  
EA  
ES1PB  
EB  
ES1PC  
EC  
ES1PD  
ED  
Unit  
Device marking code  
Maximum reverse voltage  
Maximum average forward rectified current see Fig.1  
Peak forward surge current 10ms single half sine-wave  
superimposed on rated load  
VRM  
IF(AV)  
50  
100  
150  
200  
V
A
1.0  
30  
IFSM  
A
RθJA  
RθJL  
RθJC  
105  
15  
Typical thermal resistance (1)  
°C/W  
°C  
20  
Operating junction and Storage temperature range  
TJ, TSTG  
–55 to +150  
Electrical Characteristics (TA = 25°C unless otherwise noted.)  
Parameter  
Symbol  
Value  
Unit  
Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C  
at IF=1A, TJ=25°C  
0.865  
0.920  
VF  
V
Maximum reverse current  
TJ = 25°C  
TJ =125°C  
5.0  
IR  
trr  
trr  
µA  
ns  
ns  
at rated VRM(2)  
500  
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A  
Typical reverse recovery time at TJ=25°C  
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C  
15  
25  
30  
Typical reverse recovery time at  
TJ=25°C  
8
Qrr  
CJ  
nC  
pF  
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C  
Typical junction capacitance at 4.0V, 1MHz  
10  
10  
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-  
minal of cathode band. RθJC is measured at the top centre of the body  
(2) Pulse test: 300µs pulse width, 1% duty cycle  
Document Number 88918  
04-Aug-04  
www.vishay.com  
1

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