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ES1PB-HE3/85A PDF预览

ES1PB-HE3/85A

更新时间: 2024-01-11 11:21:00
品牌 Logo 应用领域
威世 - VISHAY 瞄准线光电二极管
页数 文件大小 规格书
4页 89K
描述
1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN

ES1PB-HE3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:DO-220AA包装说明:R-PDSO-F2
针数:2Reach Compliance Code:unknown
风险等级:5.38其他特性:FREE WHEELING DIODE, LOW POWER LOSS, HIGH RELIABILITY
外壳连接:CATHODE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-220AAJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260认证状态:Not Qualified
最大重复峰值反向电压:100 V最大反向恢复时间:0.015 µs
表面贴装:YES端子面层:MATTE TIN
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

ES1PB-HE3/85A 数据手册

 浏览型号ES1PB-HE3/85A的Datasheet PDF文件第2页浏览型号ES1PB-HE3/85A的Datasheet PDF文件第3页浏览型号ES1PB-HE3/85A的Datasheet PDF文件第4页 
ES1PB, ES1PC & ES1PD  
Vishay General Semiconductor  
New Product  
High Current Density Surface Mount Ultrafast Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• Low thermal resistance  
DO-220AA (SMP)  
• Meets MSL level 1 per J-STD-020C, LF max peak  
of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in secondary rectification and free-wheeling  
MAJOR RATINGS AND CHARACTERISTICS  
for ultrafast switching speeds of ac-to-dc and dc-to-dc  
converters for both consumer and automotive  
applications.  
IF(AV)  
VRRM  
trr  
1 A  
100 V, 150 V, 200 V  
15 ns  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
VF  
0.92 V  
Tj max.  
150 °C  
Epoxy meets UL 94V-0 flammability rating  
Terminals: Matte tin plated leads, solderable per  
J-STD-002B and JESD22-B102D  
E3 suffix for commercial grade, HE3 suffix for high  
reliability grade  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ES1PB  
EB  
ES1PC  
EC  
ES1PD  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (see Fig. 1)  
VRRM  
IF(AV)  
100  
150  
200  
V
A
1.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Maximum instantaneous  
forward voltage  
at IF = 0.6 A, Tj = 25 °C  
at IF = 1 A, Tj = 25 °C  
0.865  
0.920  
VF  
V
Maximum reverse current at  
rated VR  
Tj = 25 °C  
Tj = 125 °C  
5.0  
500  
IR  
trr  
µA  
ns  
(1)  
Maximumreverse recoverytime at IF = 0.5 A, IR = 1 A, Irr = 0.25 A  
15  
Document Number 88918  
23-Jun-06  
www.vishay.com  
1

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