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ES1PBHE3/85A PDF预览

ES1PBHE3/85A

更新时间: 2024-11-19 03:15:11
品牌 Logo 应用领域
威世 - VISHAY 二极管
页数 文件大小 规格书
4页 100K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, SMP, 2 PIN

ES1PBHE3/85A 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.82
配置:SINGLE二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.865 V最大非重复峰值正向电流:30 A
元件数量:1最高工作温度:150 °C
最大输出电流:1 A最大重复峰值反向电压:100 V
最大反向恢复时间:0.015 µs子类别:Rectifier Diodes
表面贴装:YESBase Number Matches:1

ES1PBHE3/85A 数据手册

 浏览型号ES1PBHE3/85A的Datasheet PDF文件第2页浏览型号ES1PBHE3/85A的Datasheet PDF文件第3页浏览型号ES1PBHE3/85A的Datasheet PDF文件第4页 
New Product  
ES1PB, ES1PC, ES1PD  
Vishay General Semiconductor  
High Current Density Surface Mount Ultrafast Rectifiers  
FEATURES  
• Very low profile - typical height of 1.0 mm  
eSMPTM Series  
• Ideal for automated placement  
• Glass passivated chip junction  
• Ultrafast recovery times for high efficiency  
• Low forward voltage, low power losses  
• Low thermal resistance  
• Meets MSL level 1 per J-STD-020, LF maximum  
DO-220AA (SMP)  
peak of 260 °C  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
TYPICAL APPLICATIONS  
For use in secondary rectification and freewheeling  
for ultrafast switching speeds of ac-to-dc and dc-to-dc  
converters for both consumer and automotive  
applications.  
PRIMARY CHARACTERISTICS  
IF(AV)  
1.0 A  
VRRM  
trr  
100 V, 150 V, 200 V  
15 ns  
MECHANICAL DATA  
Case: DO-220AA (SMP)  
VF  
0.92 V  
Epoxy meets UL 94 V-0 flammability rating  
TJ max.  
150 °C  
Terminals: Matte tin plated leads, solderable per  
J-STD-002 and JESD22-B102  
E3 suffix for consumer grade, meets JESD 201 class  
1A whisker test, HE3 suffix for high reliability grade  
(AEC Q101 qualified), meets JESD 201 class 2  
whisker test  
Polarity: Color band denotes the cathode end  
MAXIMUM RATINGS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
SYMBOL  
ES1PB  
EB  
ES1PC  
EC  
ES1PD  
ED  
UNIT  
Device marking code  
Maximum repetitive peak reverse voltage  
Maximum average forward rectified current (Fig. 1)  
VRRM  
IF(AV)  
100  
150  
200  
V
A
1.0  
Peak forward surge current 10 ms single half sine-wave  
superimposed on rated load  
IFSM  
30  
A
Operating junction and storage temperature range  
TJ, TSTG  
- 55 to + 150  
°C  
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)  
A
PARAMETER  
TEST CONDITIONS  
SYMBOL  
VALUE  
UNIT  
Maximum instantaneous  
forward voltage (1)  
IF = 0.6 A  
IF = 1 A  
0.865  
0.920  
TJ = 25 °C  
VF  
V
Maximum reverse current at  
rated VR  
TJ = 25 °C  
TJ = 125 °C  
5.0  
500  
IR  
µA  
(2)  
Document Number: 88918  
Revision: 11-Nov-08  
For technical questions within your region, please contact one of the following:  
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com  
www.vishay.com  
1

ES1PBHE3/85A 替代型号

型号 品牌 替代类型 描述 数据表
ES1PB-HE3/85A VISHAY

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1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN

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