Datasheet > ES1PB-E3/85A

ES1PB-E3/85A

更新时间： 2024-01-24 19:33:21

品牌	Logo	应用领域
威世 - VISHAY		二极管
页数	文件大小	规格书
4页	100K
描述
Rectifier Diode, 1 Element, 1A, 100V V(RRM),

阅读下载

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

ES1PB-E3/85A 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.82
配置：	SINGLE	二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.865 V	最大非重复峰值正向电流：	30 A
元件数量：	1	最高工作温度：	150 °C
最大输出电流：	1 A	最大重复峰值反向电压：	100 V
最大反向恢复时间：	0.015 µs	子类别：	Rectifier Diodes
表面贴装：	YES	Base Number Matches：	1

ES1PB-E3/85A 数据手册

New Product

ES1PB, ES1PC, ES1PD

Vishay General Semiconductor

High Current Density Surface Mount Ultrafast Rectifiers

FEATURES

• Very low profile - typical height of 1.0 mm

eSMP^TMSeries

• Ideal for automated placement

• Glass passivated chip junction

• Ultrafast recovery times for high efficiency

• Low forward voltage, low power losses

• Low thermal resistance

• Meets MSL level 1 per J-STD-020, LF maximum

DO-220AA (SMP)

peak of 260 °C

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in secondary rectification and freewheeling

for ultrafast switching speeds of ac-to-dc and dc-to-dc

converters for both consumer and automotive

applications.

PRIMARY CHARACTERISTICS

I_F(AV)

1.0 A

V_RRM

t_rr

100 V, 150 V, 200 V

15 ns

MECHANICAL DATA

Case: DO-220AA (SMP)

V_F

0.92 V

Epoxy meets UL 94 V-0 flammability rating

T_Jmax.

150 °C

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test, HE3 suffix for high reliability grade

(AEC Q101 qualified), meets JESD 201 class 2

whisker test

Polarity: Color band denotes the cathode end

MAXIMUM RATINGS (T = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

ES1PB

ES1PC

ES1PD

UNIT

Device marking code

Maximum repetitive peak reverse voltage

Maximum average forward rectified current (Fig. 1)

V_RRM

I_F(AV)

100

150

200

1.0

Peak forward surge current 10 ms single half sine-wave

superimposed on rated load

I_FSM

Operating junction and storage temperature range

T_J, T_STG

- 55 to + 150

°C

ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous

forward voltage ⁽¹⁾

I_F= 0.6 A

I_F= 1 A

0.865

0.920

T_J= 25 °C

V_F

Maximum reverse current at

rated V_R

T_J= 25 °C

T_J= 125 °C

5.0

500

I_R

µA

(2)

Document Number: 88918

Revision: 11-Nov-08

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

www.vishay.com

12 3 4

下载PDF

与ES1PB-E3/85A相关器件

型号	品牌	描述	获取价格	数据表
ES1PB-HE3	VISHAY	Rectifier Diode, 1 Element, 1A, 100V V(RRM),	获取价格
ES1PBHE3/84A	VISHAY	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S	获取价格
ES1PBHE3/85A	VISHAY	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S	获取价格
ES1PB-HE3/85A	VISHAY	1A, 100V, SILICON, SIGNAL DIODE, DO-220AA, LEAD FREE, PLASTIC, SMP, 2 PIN	获取价格
ES1PBHM3-84A	VISHAY	High Current Density Surface Mount Ultrafast Rectifiers	获取价格
ES1PBHM3-85A	VISHAY	High Current Density Surface Mount Ultrafast Rectifiers	获取价格