ES1M-TP

更新时间： 2024-11-18 12:33:39

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	305K
描述
1 Amp Ultra Fast Recovery Silicon Rectifier 50 to 1000 Volts

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中文翻译

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数据手册
替代型号

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ES1M-TP 数据手册

NOT RECOMMENDED FOR NEW DESIGNS

USE ES1A-LTP~ES1J-LTP SERIES

M C C

ES1A

THRU

ES1M

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

Features

•

Halogen free available upon request by adding suffix "-HF"

•

Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates

1 Amp Ultra Fast

Recovery

Compliant. See ordering information)

Epoxy meets UL 94 V-0 flammability rating

Moisture Sensitivity Level 1

Silicon Rectifier

50 to 1000 Volts

High Temp Soldering: 260qC for 10 Seconds At Terminals

Superfast Recovery Times For High Efficiency

Maximum Ratings

Operating Temperature: -50qC to +150qC

Storage Temperature: -50qC to +150qC

Maximum Thermal Resistance; 15qC/W Junction To Lead

DO-214AC

(HSMA) (High Profile)

MCC

Part

Number

Maximum

Recurrent

Marking Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

Device

Cathode Band

ES1A

ES1B

ES1C

ES1D

ES1G

ES1J

ES1K

ES1M

ES1A

ES1B

ES1C

ES1D

ES1G

ES1J

ES1K

ES1M

50V

100V

150V

200V

400V

600V

800V

1000V

35V

70V

100V

150V

105V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25qC Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_a= 75qC

DIMENSIONS

INCHES

MIN

.078

.067

.002

---

MIN

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

ES1A-D

ES1G-J

ES1K~M

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_FSM

30A

8.3ms, half sine

DIM

MAX

.116

.089

.008

.02

MAX

2.95

2.25

.20

NOTE

1.98

1.70

.05

---

.51

.035

.065

.205

.160

.100

.055

.096

.224

.180

.112

.89

1.40

2.45

5.69

4.57

2.84

1.65

5.21

4.06

2.57

V_F

.975V

1.35V

1.70V

I_FM= 1.0A;

T_J= 25qC*

SUGGESTED SOLDER

PAD LAYOUT

I_R

5PA

T_J= 25qC

0.090”

100PA T_J= 100qC

Maximum Reverse

Recovery Time

ES1A-D

0.085”

T_rr

C_J

50ns

75ns

100ns

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

ES1G-K

ES1M

0.070”

Typical Junction

Capacitance

45pF

Measured at

1.0MHz, V_R=4.0V

*Pulse test: Pulse width 200 Psec, Duty cycle 2%

Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.

www.mccsemi.com

Revision: C

2013/01/01

1 of 4

12 3 4

中文翻译

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ES1M-TP 替代型号

型号	品牌	替代类型	描述	数据表
ES1ME-TP	MCC	完全替代	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC,
US1MHE3_A/H	VISHAY	功能相似	暂无描述
GF1M	EIC	功能相似	GLASS PASSIVATED JUNCTION

与ES1M-TP相关器件

型号	品牌	获取价格	描述	数据表
ES1PA	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PAE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 50V V(RRM),
ES1PB	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB_11	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB_15	VISHAY	获取价格	High Current Density Surface Mount Ultrafast Rectifiers
ES1PB-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PB-E3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PB-HE3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM),
ES1PBHE3/84A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S
ES1PBHE3/85A	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, DO-220AA, ROHS COMPLIANT, PLASTIC, S

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