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ES1ME-TP-HF PDF预览

ES1ME-TP-HF

更新时间: 2024-11-18 13:07:43
品牌 Logo 应用领域
美微科 - MCC 二极管光电二极管
页数 文件大小 规格书
4页 305K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-214AC, SAME, 2 PIN

ES1ME-TP-HF 技术参数

是否Rohs认证: 符合生命周期:Not Recommended
包装说明:R-PDSO-C2Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JEDEC-95代码:DO-214ACJESD-30 代码:R-PDSO-C2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-50 °C
最大输出电流:1 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大重复峰值反向电压:1000 V
最大反向恢复时间:0.1 µs表面贴装:YES
端子面层:Tin (Sn)端子形式:C BEND
端子位置:DUAL处于峰值回流温度下的最长时间:10
Base Number Matches:1

ES1ME-TP-HF 数据手册

 浏览型号ES1ME-TP-HF的Datasheet PDF文件第2页浏览型号ES1ME-TP-HF的Datasheet PDF文件第3页浏览型号ES1ME-TP-HF的Datasheet PDF文件第4页 
NOT RECOMMENDED FOR NEW DESIGNS  
USE ES1A-LTP~ES1J-LTP SERIES  
M C C  
ES1A  
THRU  
ES1M  
TM  
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Micro Commercial Components  
Features  
Halogen free available upon request by adding suffix "-HF"  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
1 Amp Ultra Fast  
Recovery  
Compliant. See ordering information)  
Epoxy meets UL 94 V-0 flammability rating  
·
·
Moisture Sensitivity Level 1  
Silicon Rectifier  
50 to 1000 Volts  
x
x
High Temp Soldering: 260qC for 10 Seconds At Terminals  
Superfast Recovery Times For High Efficiency  
Maximum Ratings  
x
x
x
Operating Temperature: -50qC to +150qC  
Storage Temperature: -50qC to +150qC  
Maximum Thermal Resistance; 15qC/W Junction To Lead  
DO-214AC  
(HSMA) (High Profile)  
MCC  
Part  
Number  
Maximum  
Recurrent  
Marking Peak Reverse  
Voltage  
Maximum  
RMS  
Voltage  
Maximum  
DC  
Blocking  
Voltage  
50V  
H
Device  
Cathode Band  
J
ES1A  
ES1B  
ES1C  
ES1D  
ES1G  
ES1J  
ES1K  
ES1M  
ES1A  
ES1B  
ES1C  
ES1D  
ES1G  
ES1J  
ES1K  
ES1M  
50V  
100V  
150V  
200V  
400V  
600V  
800V  
1000V  
35V  
70V  
100V  
150V  
105V  
140V  
280V  
420V  
560V  
700V  
200V  
400V  
A
C
600V  
800V  
1000V  
E
D
B
F
G
Electrical Characteristics @ 25qC Unless Otherwise Specified  
Average Forward  
Current  
IF(AV)  
1.0A  
Ta = 75qC  
DIMENSIONS  
INCHES  
MIN  
.078  
.067  
.002  
---  
MM  
MIN  
Peak Forward Surge  
Current  
Maximum  
Instantaneous  
Forward Voltage  
ES1A-D  
ES1G-J  
ES1K~M  
Maximum DC  
Reverse Current At  
Rated DC Blocking  
Voltage  
IFSM  
30A  
8.3ms, half sine  
DIM  
A
MAX  
.116  
.089  
.008  
.02  
MAX  
2.95  
2.25  
.20  
NOTE  
1.98  
1.70  
.05  
B
C
D
E
---  
.51  
.035  
.065  
.205  
.160  
.100  
.055  
.096  
.224  
.180  
.112  
.89  
1.40  
2.45  
5.69  
4.57  
2.84  
F
1.65  
5.21  
4.06  
2.57  
G
H
J
VF  
.975V  
1.35V  
1.70V  
IFM = 1.0A;  
TJ = 25qC*  
SUGGESTED SOLDER  
PAD LAYOUT  
IR  
5PA  
TJ = 25qC  
0.090”  
100PA TJ = 100qC  
Maximum Reverse  
Recovery Time  
ES1A-D  
0.085”  
Trr  
CJ  
50ns  
75ns  
100ns  
IF=0.5A, IR=1.0A,  
Irr=0.25A  
ES1G-K  
ES1M  
0.070”  
Typical Junction  
Capacitance  
45pF  
Measured at  
1.0MHz, VR=4.0V  
*Pulse test: Pulse width 200 Psec, Duty cycle 2%  
Note: 1. High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
www.mccsemi.com  
Revision: C  
2013/01/01  
1 of 4  

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