ES1ME

更新时间： 2024-02-20 14:16:35

品牌	Logo	应用领域
美微科 - MCC		/
页数	文件大小	规格书
4页	143K
描述
1 Amp Super Fast Recovery Silicon Rectifier 50 to 1000 Volts

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技术参数
数据手册

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ES1ME 技术参数

生命周期：	Active	包装说明：	O-PALF-W2
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.80	风险等级：	5.55
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	O-PALF-W2
元件数量：	1	端子数量：	2
最大输出电流：	0.7 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	ROUND	封装形式：	LONG FORM
认证状态：	Not Qualified	最大反向恢复时间：	1.5 µs
表面贴装：	NO	端子形式：	WIRE
端子位置：	AXIAL	Base Number Matches：	1

ES1ME 数据手册

M C C

ES1AE

THRU

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20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

Micro Commercial Components

ES1ME

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

1 Amp Super Fast

Recovery

Features

Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

Silicon Rectifier

50 to 1000 Volts

High Temp Soldering: 260qC for 10 Seconds At Terminals

Superfast Recovery Times For High Efficiency

Maximum Ratings

Operating Temperature: -50qC to +150qC

Storage Temperature: -50qC to +150qC

Maximum Thermal Resistance; 15qC/W Junction To Lead

DO-214AC

(SMAE)

MCC

Part

Number

Maximum

Recurrent

Marking Peak Reverse

Voltage

Maximum

RMS

Voltage

Maximum

Blocking

Voltage

50V

Device

Cathode Band

ES1AE

ES1BE

ES1CE

ES1DE

ES1GE

ES1JE

ES1KE

ES1ME

ES1A

ES1B

ES1C

ES1D

ES1G

ES1J

ES1K

ES1M

50V

100V

150V

200V

400V

600V

800V

1000V

35V

70V

100V

150V

105V

140V

280V

420V

560V

700V

200V

400V

600V

800V

1000V

Electrical Characteristics @ 25qC Unless Otherwise Specified

Average Forward

Current

I_F(AV)

1.0A

T_J= 75qC

Peak Forward Surge

Current

Maximum

Instantaneous

Forward Voltage

ES1AE-DE

I_FSM

30A

8.3ms, half sine

DIMENSIONS

INCHES

MIN

.079

.050

.002

---

MIN

DIM

MAX

.096

.075

.008

.02

MAX

2.44

1.90

.20

NOTE

2.01

1.27

.05

---

.51

.030

.189

.157

.090

.060

.208

.180

.115

.76

1.52

5.30

4.57

2.92

V_F

.975V

1.35V

1.70V

I_FM= 1.0A;

T_J= 25qC*

4.80

4.00

2.29

ES1GE-JE

ES1KE~ME

SUGGESTED SOLDER

PAD LAYOUT

0.090”

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

I_R

5PA

T_J= 25qC

100PA T_J= 100qC

Maximum Reverse

Recovery Time

ES1AE-DE

0.085”

T_rr

C_J

50ns

75ns

100ns

I_F=0.5A, I_R=1.0A,

I_rr=0.25A

ES1GE-KE

ES1ME

Typical Junction

Capacitance

45pF

Measured at

1.0MHz, V_R=4.0V

0.070”

*Pulse test: Pulse width 200 Psec, Duty cycle 2%

www.mccsemi.com

Revision: 5

2007/06/19

1 of 4

12 3 4

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