Photodiode
EPD-440-0-3.6
Preliminary
11.04.2007
Technology
rev. 03/07
Type
Case
Wavelength
UV
Schottky Contact
GaP
TO-39 + UV-glass
Description
Wide bandwidth and high spectral sensitivity in the
UV and visible range (190 nm - 570 nm), mounted
in hermetically sealed TO-39 package with UV-
glass window
3,25 ± 0,1
Chip Location
Applications
Medical engineering (dermatology), output check
of UV - lamps and oil or gas burner flame,
measurement and control of ecological
parameters, radiation control for a solarium, UV
water purification facilities
Anode
13,5 ± 1,0
2,00 ± 0,05
Chip Location
ELC-69
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
10.9
7.0
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-40 to +125
-40 to +125
135
°C
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
5
Typ
Max
80
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR = 5 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
VR
ID
V
20
pA
nm
λp
Peak sensitivity wavelength
Responsivity at λP
440
0.17
Sλ
A/W
λmin, λmax
∆λ0.5
RSH
NEP
D*
Sensitivity range at 1%
Spectral bandwidth at 50%
Shunt resistance
190
50
570
nm
180
70
1.5x10-14
2.2x1012
2.6
nm
GΩ
Noise equivalent power
Specific detectivity
W/ Hz
cm Hz W −1
nF
λ = 440 nm
λ = 440 nm
VR = 0 V
CJ
Junction capacitance
Switching time (RL = 50 ꢀ)
VR = 5 V
tr, tf
1/130
ns
VR = 0 V
Ee = 1 mW/cm²
Photo current at λ = 440 nm1,2)
IPh
14
µA
1)for information only
2)measured with common halogen lamp source and appropriate filter
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [GΩ]
Quantity
Type
Lot N°
EPD-440-0-3.6
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545