Photodiode
EPD-740-9-0.4
Preliminary
6/28/2007
rev. 01/07
Type
SMD
Technology
AlGaAs/AlGaAs
Case
Wavelength
Infrared
TOPLED
Description
2,8 ± 0,2
2,2 ± 0,1
Selective photodiode mounted in TOPLED PLCC-2
package, for easy circuit board mounting and
assembling of arrays. Narrow response range (740
nm peak) by means of integrated filter
1,9 ± 0,2
Cathode
1
Applications
Optical communications, safety equipment, light
barriers
2
Anode
0,15
0,5 ± 0,2
ELC-68
1
Cathode
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.09
5
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-20 to +85
-40 to +90
240
°C
Tsld
°C
120
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
5
Typ
Max
Unit
Breakdown voltage1)
Dark current
Responsivity at 740 nm1)
Spectral range at 10 %
Spectral bandwidth at 50%
Shunt resistance
IR = 10 µA
VR = 5 V
VR
ID
V
pA
40
200
770
VR = 0 V
Sλ
0.5
A/W
nm
VR = 0 V
λ0.5
∆λ0.4
RSH
NEP
D*
680
VR = 0 V
115
350
7.2x10-15
4.2x1012
40
nm
VR = 10 mV
Gꢀ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 740 nm
λ = 740 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time
pF
ns
VR = 5 V
tr, tf
15/30
VR = 0 V
Ee = 1mW/cm²
2)
IPh
760
nA
Photo-current at λP
1)for information only
2) Halogen lamp source with appropriate filter
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢀ]
Quantity
Type
Lot N°
EPD-740-9-0.4
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545