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EPD-880-0-1.4 PDF预览

EPD-880-0-1.4

更新时间: 2024-11-21 06:57:43
品牌 Logo 应用领域
EPIGAP 光电二极管光电二极管
页数 文件大小 规格书
2页 197K
描述
Photodiode

EPD-880-0-1.4 数据手册

 浏览型号EPD-880-0-1.4的Datasheet PDF文件第2页 
Photodiode  
EPD-880-0-1.4  
Preliminary  
6/28/2007  
rev. 01/07  
Type  
Technology  
AlGaAs/GaAs  
Case  
Wavelength  
Infrared  
Integrated filter  
TO-46  
Description  
Selective photodiode mounted in hermetically  
sealed TO-46 package. Narrow bandwidth and  
high spectral sensitivity in the infrared range  
(810…950 nm).  
+0,1  
-0,1  
5,1  
Ø 5,31  
Ø 4,22  
+0,025  
-0,025  
0,2  
Cathode  
Note: Special packages with standoff available on request  
Applications  
Anode  
Chip Location  
+1,6  
-1,6  
0,23 +0,075  
Alarm systems, light barriers, special sensors,  
analytics, optical communication  
13,4  
TO-46  
Miscellaneous Parameters  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test сonditions  
Symbol  
Value  
Unit  
Active area  
A
1.2  
mm²  
%/K  
°C  
Temperature coefficient of ID  
Operating temperature range  
Storage temperature range  
Soldering Temperature  
Acceptance angle at 50% Sλ  
TC(ID)  
Tamb  
Tstg  
5
-30 to +100  
-40 to +125  
260  
°C  
Tsld  
t 3 s, 3 mm from case  
°C  
45  
deg.  
ϕ
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test conditions Symbol  
Min  
5
Typ  
Max  
2.5  
Unit  
Breakdown voltage1)  
Dark current  
IR = 10 µA  
VR = 1 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 10 mV  
VR  
ID  
V
nA  
1.0  
890  
0.55  
λp  
Peak sensitivity wavelength  
Responsivity at λP  
nm  
Sλ  
0.3  
A/W  
nm  
Sensitivity range at 10% 1)  
Spectral bandwidth at 50%  
Shunt resistance  
λmin, λmax  
∆λ0.5  
RSH  
NEP  
D*  
800  
960  
115  
205  
3.3x10-14  
2.4x1012  
590  
nm  
GΩ  
Noise equivalent power  
Specific detectivity  
W/ Hz  
λ = 880 nm  
λ = 880 nm  
VR = 0 V  
cm Hz W 1  
CJ  
Junction capacitance  
Switching time (RL = 50 )  
pF  
ns  
VR = 1 V  
tr, tf  
200  
VR = 0 V  
Ee = 1mW/cm²  
IPh  
Photo-current at λP = 875 nm  
4.8  
µA  
1)for information only  
2) Halogen lamp source with appropriate filter  
Note: All measurements carried out with EPIGAP equipment  
Labeling  
RD (typ.) [G]  
Quantity  
Type  
Lot N°  
EPD-880-0-1.4  
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 2  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

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