SMD-Photodiode
EPD-880-1-0.9-1
28.01.2008
rev. 01
Type
SMD
Technology
GaAs
Case
Wavelength
Infrared
SMD 1206
Description
Selective photodiode with narrow
bandwidth and high spectral sensitivity in
the infrared range (810…950 nm).
Compact design in standard SMD
package allows for easy circuit board
mounting and assembling of arrays.
Applications
Alarm systems, light barriers, special
sensors
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.62
5
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
TCID
Tamb
Tstg
-20 to +85
-40 to +125
°C
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions
Symbol
Min
Typ
Max
2.5
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR = 1 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
VR
ID
5
V
nA
1.0
890
0.55
λp
Peak sensitivity wavelength
Responsivity at λP
nm
Sλ
0.3
A/W
nm
Sensitivity range at 10% 1)
Spectral bandwidth at 50%
Shunt resistance
λmin, λmax
∆λ0.5
RSH
NEP
D*
800
960
115
205
3.2x10-14
2.4x1012
500
nm
GΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 880 nm
λ = 880 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time (RL = 50 ꢀ)
1)for information only
pF
ns
VR = 1 V
tr, tf
175
Labeling
Typ. Sλ [A/W]
Quantity
Type
Lot N°
EPD-880-1-0.9-1
*Note: All measurements carried out with EPIGAP equipment
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications.All operating parameters must be validated for each customer application by the customer.
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545