Photodiode
EPD-880-5-0.9
Prototype
04.05.2007
rev. 01/07
Type
Technology
AlGaAs/GaAs
Case
Wavelength
Infrared
Integrated filter
5 mm plastic lens
Description
Selective photodiode mounted in standard 5 mm
package without standoff. Narrow bandwidth and
high spectral sensitivity in the infrared range
(810…950 nm).
9,15
5,75 - 0,3
1
Anode
Note: Special packages with standoff available on request
Applications
1,5
0,6 - 0,2
Ø 5
± 1,0
36,5
Alarm systems, light barriers, special sensors,
analytics, optical communication
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.62
5
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-20 to +85
-30 to +100
260
°C
Tsld
t ≤ 3 s, 3 mm from case
°C
20
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
5
Typ
Max
2.5
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR
ID
V
nA
VR = 1 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
1.0
890
0.55
λp
Peak sensitivity wavelength
Responsivity at λP
nm
Sλ
0.3
A/W
nm
Sensitivity range at 10% 1)
Spectral bandwidth at 50%
Shunt resistance
λmin, λmax
∆λ0.5
RSH
NEP
D*
800
960
115
150
3.3x10-14
2.4x1012
120
nm
GΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 880 nm
λ = 880 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time (RL = 50 Ω)
1)for information only
pF
ns
VR = 1 V
tr, tf
200
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢀ]
Quantity
Type
Lot N°
EPD-880-5-0.9
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545