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EPD-880-3-0.9 PDF预览

EPD-880-3-0.9

更新时间: 2024-02-05 20:07:29
品牌 Logo 应用领域
EPIGAP 光电二极管光电二极管
页数 文件大小 规格书
2页 197K
描述
Photodiode

EPD-880-3-0.9 技术参数

生命周期:Contact ManufacturerReach Compliance Code:unknown
风险等级:5.61Base Number Matches:1

EPD-880-3-0.9 数据手册

 浏览型号EPD-880-3-0.9的Datasheet PDF文件第2页 
Photodiode  
EPD-880-3-0.9  
Preliminary  
6/21/2007  
rev. 02/07  
Type  
Technology  
AlGaAs/GaAs  
Case  
Wavelength  
Infrared  
Integrated filter  
3 mm plastic lens  
Description  
Selective photodiode mounted in standard 3 mm  
package without standoff. Narrow bandwidth and  
high spectral sensitivity in the infrared range  
(810…950 nm).  
3,4 - 0,3  
4,8 - 0,4  
Anode  
Note: Special packages with standoff available on request  
Applications  
3,7 - 0,2  
1,8 -0,6  
0,6 - 0,2  
Alarm systems, light barriers, special sensors,  
analytics, optical communication  
29 - 2,0  
6,1 - 0,4  
Miscellaneous Parameters  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test сonditions  
Symbol  
Value  
Unit  
Active area  
A
0.62  
5
mm²  
%/K  
°C  
Temperature coefficient of ID  
Operating temperature range  
Storage temperature range  
Soldering Temperature  
Acceptance angle at 50% Sλ  
TC(ID)  
Tamb  
Tstg  
-20 to +85  
-30 to +100  
260  
°C  
Tsld  
t 3 s, 3 mm from case  
°C  
60  
deg.  
ϕ
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test conditions Symbol  
Min  
5
Typ  
Max  
2.5  
Unit  
Breakdown voltage1)  
Dark current  
IR = 10 µA  
VR  
ID  
V
nA  
VR = 1 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 10 mV  
1.0  
890  
0.55  
λp  
Peak sensitivity wavelength  
Responsivity at λP  
nm  
Sλ  
0.3  
A/W  
nm  
Sensitivity range at 10% 1)  
Spectral bandwidth at 50%  
Shunt resistance  
λmin, λmax  
∆λ0.5  
RSH  
NEP  
D*  
800  
960  
115  
115  
3.3x10-14  
2.4x1012  
120  
nm  
GΩ  
Noise equivalent power  
Specific detectivity  
W/ Hz  
λ = 880 nm  
λ = 880 nm  
VR = 0 V  
cm Hz W 1  
CJ  
Junction capacitance  
Switching time (RL = 50 )  
pF  
ns  
VR = 1 V  
tr, tf  
200  
VR = 0 V  
Ee = 1mW/cm²  
IPh  
Photo-current at λP = 875 nm  
14  
µA  
1)for information only  
2) Halogen lamp source with appropriate filter  
Note: All measurements carried out with EPIGAP equipment  
Labeling  
RD (typ.) [G]  
Quantity  
Type  
Lot N°  
EPD-880-3-0.9  
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 2  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

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