Photodiode
EPD-660-3-0.5
Preliminary
6/21/2007
rev. 03/07
Type
Technology
AlGaAs/GaAs
Case
Wavelength
Red
water clear
3 mm plastic lens
Description
Selective photodiode mounted in standard 3 mm
package with standoff . Narrow response range
(660 nm peak) by means of integrated filter
4,3
30,0 ±1,0
1,5
Note: Special packages without standoff available on request
Applications
1,0
0,65
Ø3,1
Anode
4,0
1,0
Optical communications, safety equipment,
automation, analytics
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.17
4
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Soldering Temperature
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-20 to +85
-40 to +100
260
°C
Tsld
t ≤ 3 s, 3 mm from case
°C
60
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
5
Typ
Max
200
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR = 1 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
VR
ID
V
pA
40
λp
Peak sensitivity wavelength
Responsivity at λP
660
0.42
nm
Sλ
A/W
nm
Sensitivity range at 1% 1)
Spectral bandwidth at 50%
Shunt resistance
λmin, λmax
∆λ0.5
RSH
NEP
D*
605
500
705
80
nm
670
GΩ
8.5x10-15
4.8x1012
50
Noise equivalent power
Specific detectivity
W/ Hz
λ = 660 nm
λ = 660 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time (RL = 50 ꢀ)
pF
ns
VR = 1 V
tr, tf
15/30
VR = 0 V
Ev = 1000 lx
Photo-current at illuminant A1,2)
1)for information only
IPh
0.33
µA
2) Standard light source with a color temperature of 2856 K
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢀ]
Quantity
Type
Lot N°
EPD-660-3-0.5
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545