5秒后页面跳转
EPD-660-3-0.5 PDF预览

EPD-660-3-0.5

更新时间: 2024-11-21 06:57:43
品牌 Logo 应用领域
EPIGAP 光电二极管光电二极管
页数 文件大小 规格书
2页 175K
描述
Photodiode

EPD-660-3-0.5 数据手册

 浏览型号EPD-660-3-0.5的Datasheet PDF文件第2页 
Photodiode  
EPD-660-3-0.5  
Preliminary  
6/21/2007  
rev. 03/07  
Type  
Technology  
AlGaAs/GaAs  
Case  
Wavelength  
Red  
water clear  
3 mm plastic lens  
Description  
Selective photodiode mounted in standard 3 mm  
package with standoff . Narrow response range  
(660 nm peak) by means of integrated filter  
4,3  
30,0 ±1,0  
1,5  
Note: Special packages without standoff available on request  
Applications  
1,0  
0,65  
Ø3,1  
Anode  
4,0  
1,0  
Optical communications, safety equipment,  
automation, analytics  
Miscellaneous Parameters  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test сonditions  
Symbol  
Value  
Unit  
Active area  
A
0.17  
4
mm²  
%/K  
°C  
Temperature coefficient of ID  
Operating temperature range  
Storage temperature range  
Soldering Temperature  
Acceptance angle at 50% Sλ  
TC(ID)  
Tamb  
Tstg  
-20 to +85  
-40 to +100  
260  
°C  
Tsld  
t 3 s, 3 mm from case  
°C  
60  
deg.  
ϕ
Optical and Electrical Characteristics  
Tamb = 25°C, unless otherwise specified  
Parameter  
Test conditions Symbol  
Min  
5
Typ  
Max  
200  
Unit  
Breakdown voltage1)  
Dark current  
IR = 10 µA  
VR = 1 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 0 V  
VR = 10 mV  
VR  
ID  
V
pA  
40  
λp  
Peak sensitivity wavelength  
Responsivity at λP  
660  
0.42  
nm  
Sλ  
A/W  
nm  
Sensitivity range at 1% 1)  
Spectral bandwidth at 50%  
Shunt resistance  
λmin, λmax  
∆λ0.5  
RSH  
NEP  
D*  
605  
500  
705  
80  
nm  
670  
GΩ  
8.5x10-15  
4.8x1012  
50  
Noise equivalent power  
Specific detectivity  
W/ Hz  
λ = 660 nm  
λ = 660 nm  
VR = 0 V  
cm Hz W 1  
CJ  
Junction capacitance  
Switching time (RL = 50 )  
pF  
ns  
VR = 1 V  
tr, tf  
15/30  
VR = 0 V  
Ev = 1000 lx  
Photo-current at illuminant A1,2)  
1)for information only  
IPh  
0.33  
µA  
2) Standard light source with a color temperature of 2856 K  
Note: All measurements carried out with EPIGAP equipment  
Labeling  
RD (typ.) [G]  
Quantity  
Type  
Lot N°  
EPD-660-3-0.5  
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201  
1 of 2  
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545  

与EPD-660-3-0.5相关器件

型号 品牌 获取价格 描述 数据表
EPD-660-5 ETC

获取价格

Selective Photodiode
EPD-660-5-0.9 EPIGAP

获取价格

Photodiode
EPD-740-1 ROITHNER

获取价格

Photo Diode
EPD-740-5-0.5 EPIGAP

获取价格

Photodiode
EPD-740-5-0.9 EPIGAP

获取价格

Photodiode
EPD-740-9-0.4 EPIGAP

获取价格

Photodiode
EPD8000 ELAN

获取价格

8 BIT UC BASED DATA PROCESSOR IC FOR USE ON PAIM TOP DEVICES
EPD8000G PCA

获取价格

MDSL Transformer
EPD-880-0-1.4 EPIGAP

获取价格

Photodiode
EPD-880-1-0.9-1 EPIGAP

获取价格

SMD-Photodiode