Datasheet > EPD-660-5

EPD-660-5

更新时间： 2022-12-21 14:16:27

品牌	Logo	应用领域
其他 - ETC		光电二极管光电二极管
页数	文件大小	规格书
1页	40K
描述
Selective Photodiode

阅读下载

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EPD-660-5 数据手册

Selective Photodiode

EPD-660-5

Preliminary data

Spectral range

Visible-red

Type

Technology

Case

EPD-660-5

AlGaAs/AlGaAs/GaAs

5 mm plastic lens

Description

Narrow response range (660 nm peak),

single heterostructure on the substrate

Applications

Optical communications,

safety equipment

7,1 _{- 0,6}

1,1 _{- 0,1}

6,2 _{- 0,5}

Anode

10,6 _{- 0,6}

0,7 _{- 0,4}

16,5 _{- 2,0}

Maximum Ratings

Parameter

Value

Unit

Storage Temperature

- 40...+90

°C

Operating Temperature

Soldering Temperature

-40...+85

240

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Parameter

Active area

Test conditions Symbol

Min

620

Typ

0.13

660

Max

700

Unit

mm²

Peak sensitivity

l _Smax

Äl _0,5

Spectral bandwidth at 50%

Acceptance angle at 50% S_ë

Responsivity at 660 nm

Short-circuit current*

deg.

A/W

µA

V_R= 0 V

S_ë

0.42

0.85

V_R= 0, E_e=1

mW/cm²

I_SC

Dark current

Reverse voltage

Junction capacitance

Rise time

V_R= 5 V, E_e=0

I_R= 10 µA

I_D

V_R

t_r

200

V_R= 0, E_e=0

R_L= 50 ,

V_R= 5 V

Fall time

t_f

*Light source is an AlGaAs LED with a peak emission wavelength of 660 nm

rev.04/01

下载PDF

与EPD-660-5相关器件

型号	品牌	描述	获取价格	数据表
EPD-660-5-0.9	EPIGAP	Photodiode	获取价格
EPD-740-1	ROITHNER	Photo Diode	获取价格
EPD-740-5-0.5	EPIGAP	Photodiode	获取价格
EPD-740-5-0.9	EPIGAP	Photodiode	获取价格
EPD-740-9-0.4	EPIGAP	Photodiode	获取价格
EPD8000	EMC	8 BIT UC BASED DATA PROCESSOR IC FOR USE ON PAIM TOP DEVICES	获取价格