Datasheet > EPD-660-1-0.9

EPD-660-1-0.9

更新时间： 2022-12-18 00:40:25

品牌	Logo	应用领域
EPIGAP		光电二极管光电二极管
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2页	33K
描述
SMD-Photodiode

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EPD-660-1-0.9 数据手册

SMD-Photodiode

EPD-660-1-0.9

Preliminary

6/21/2007

rev. 03/07

Type

SMD

Technology

AlGaAs/GaAs

Case

Wavelength

Red

SMD 1206

Description

all dimensions: mm

all tolerances: ± 0,1

Narrow bandwidth and high spectral

sensitivity in the red visible range

(610…700 nm), compact design in

standard SMD package allows for easy

circuit board mounting and assembling of

arrays

pad 1,15 x 1,0

cathode

Applications

Light barriers, optical communications,

safety equipment, alarm systems

3,2

Miscellaneous Parameters

T_amb= 25°C, unless otherwise specified

Parameter

Test сonditions

Symbol

Value

Unit

Active area

0.62

mm²

°C

T_amb

T_stg

Operating temperature range

Storage temperature range

-20 to +85

-40 to +125

°C

Optical and Electrical Characteristics

T_amb= 25°C, unless otherwise specified

Parameter

Test conditions

Symbol

Min

Typ

Max

300

Unit

Breakdown voltage¹⁾

I_R= 10 µA

V_R= 1 V

V_R= 0 V

V_R

I_D

Dark current (E_e= 0 W/m²)

S_λ

Responsivity at λ_P

0.42

660

A/W

λ_P

Peak sensitivity

V_R= 0 V

V_R= 10 mV

λ_min, λ_max

∆λ_0.5

R_SH

NEP

Sensitivity range at 50%

Spectral bandwidth at 50%

Shunt resistance

620

200

700

400

GΩ

8.5x10^-15

9.2x10¹²

Noise equivalent power

Specific detectivity

λ = 660 nm

V_R= 0 V

W/ Hz

cm Hz W ⁻¹

C_J

Junction capacitance

Switching time (R_L= 50 ꢀ)

¹⁾for information only

V_R= 1 V

t_r, t_f

Labeling

Typ. S_λ[A/W]

Quantity

Type

Lot N°

EPD-660-1-0.9

*Note: All measurements carried out with EPIGAP equipment

EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201

1 of 2

Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545

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