Photodiode
EPD-470-5-0.5
Preliminary
11.04.2007
Technology
rev. 04/07
Type
Case
Wavelength
Blue - Green
Integrated filter
GaP
5 mm plastic lens
Description
Selective photodiode chip in standard 5 mm
package. Narrow bandwidth and high spectral
sensitivity in the range of 400 - 560 nm. Housing
without standoff leads.
9,15
5,75 - 0,3
1
Anode
Note: Special packages with standoff available on request
Applications
1,5
0,6 - 0,2
Ø 5
Optical communications, safety equipment,
automation, analytics, fluorescence detection
± 1,0
36,5
Miscellaneous Parameters
Tamb = 25°C, unless otherwise specified
Parameter
Test сonditions
Symbol
Value
Unit
Active area
A
0.17
5
mm²
%/K
°C
Temperature coefficient of ID
Operating temperature range
Storage temperature range
Acceptance angle at 50% Sλ
TC(ID)
Tamb
Tstg
-40 to +85
-40 to +100
20
°C
deg.
ϕ
Optical and Electrical Characteristics
Tamb = 25°C, unless otherwise specified
Parameter
Test conditions Symbol
Min
Typ
Max
Unit
Breakdown voltage1)
Dark current
IR = 10 µA
VR = 5 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 0 V
VR = 10 mV
VR
ID
10
5
V
pA
30
λp
Peak sensitivity wavelength
Responsivity at 470 nm
Sensitivity range at 1% 1)
Spectral bandwidth at 50%
Shunt resistance
460
385
70
470
0.3
480
nm
Sλ
A/W
nm
λmin, λmax
∆λ0.5
RSH
NEP
D*
565
100
100
4.4x10-15
9.3x1012
120
nm
GΩ
Noise equivalent power
Specific detectivity
W/ Hz
λ = 470 nm
λ = 470 nm
VR = 0 V
cm Hz W −1
CJ
Junction capacitance
Switching time (RL = 50 Ω)
pF
ns
VR = 5 V
tr, tf
200
VR = 0 V
Ev = 1000 lx
IPh
Photo current at Illuminant A
1)for information only
0.2
µA
Note: All measurements carried out with EPIGAP equipment
Labeling
RD (typ.) [Gꢀ]
Quantity
Type
Lot N°
EPD-470-5-0.5
EPIGAP Optoelektronik GmbH, D-12555 Berlin, Köpenicker Str.325 b, Haus 201
1 of 2
Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545