Datasheet > EDL1216AASA

EDL1216AASA

更新时间： 2024-11-25 22:05:15

品牌	Logo	应用领域
尔必达 - ELPIDA		/
页数	文件大小	规格书
59页	470K
描述
128M bits Mobile RAM

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

EDL1216AASA 数据手册

DATA SHEET

128M bits Mobile RAM

EDL1216AASA (8M words × 16 bits)

Description

Pin Configurations

The EDL1216AA is a 128M bits Mobile RAM organized

as 2,097,152 words × 16 bits × 4 banks. The Mobile

RAM achieved low power consumption and high-speed

data transfer using the pipeline architecture. All inputs

and outputs are synchronized with the positive edge of

the clock.

/xxx indicates active low signal.

54-ball FBGA ( BGA)

VSS DQ15 VSSQ

DQ14 DQ13 VDDQ

DQ12 DQ11 VSSQ

DQ10 DQ9 VDDQ

VDDQ DQ0

VSSQ DQ2

VDDQ DQ4

VSSQ DQ6

VDD

DQ1

DQ3

DQ5

This product is packaged in 54-ball FBGA (µBGA ).

Features

• Low voltage power supply

VDD:

2.5V ± 0.2V

VDDQ: 1.8V ± 0.15V

• Wide temperature range (−25°C to 85°C)

• Programmable partial self refresh

• Programmable driver strength

DQ8

VSS

CKE

VDD LDQM DQ7

/CAS /RAS /WE

UDQM CLK

• Programmable temperature compensated self refresh

(Option)

A11

BA0

BA1

/CS

A10

VDD

• Deep power down mode

• Small package (54-ball FBGA (µBGA))

• Fully Synchronous Dynamic RAM, with all signals

referenced to a positive clock edge

VSS

• Pulsed interface

(Top view)

• Possible to assert random column address in every

cycle

A0 to A11

BA0, BA1

Address inputs

Bank select

• Quad internal banks controlled by BA0 and BA1

• Byte control by LDQM and UDQM

• Wrap sequence = Sequential/ Interleave

• /CAS latency (CL) = 2, 3

DQ0 to DQ15

CLK

Data inputs/ outputs

Clock input

CKE

Clock enable

/CS

Chip select

• Automatic precharge and controlled precharge

• Auto refresh and self refresh

/RAS

/CAS

/WE

Row address strobe

Column address strobe

Write enable

• ×16 organization

• 4,096 refresh cycles/64ms

UDQM

LDQM

VDD

Upper DQ mask enable

Lower DQ mask enable

Power supply

• Burst termination by Burst stop command and

Precharge command

• FBGA(µBGA) package is lead free solder (Sn-Ag-Cu)

VSS

Ground

Applications

VDDQ

VSSQ

Power supply for DQ

Ground for DQ

No connection

Mobile cellular handsets, PDAs, wireless PDAs,

handheld PCs, home electronic appliances, and

information appliances, etc.

Document No. E0196E30 (Ver. 3.0)

Date Published June 2002 (K) Japan

URL: http://www.elpida.com

Elpida Memory, Inc. 2001-2002

12 3 4 5 6 7...59

中文翻译

下载PDF

与EDL1216AASA相关器件

型号	品牌	获取价格	描述	数据表
EDL1216AASA-75	ETC	获取价格	SDRAM\|4X2MX16\|CMOS\|BGA\|54PIN\|PLASTIC
EDL1216AASA-75-E	ELPIDA	获取价格	128M bits Mobile RAM
EDL1216BASA-75	ETC	获取价格	SDRAM\|4X2MX16\|CMOS\|BGA\|54PIN\|PLASTIC
EDL1216BASA-75-E	ELPIDA	获取价格	Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54
EDL1216CASA	ELPIDA	获取价格	128M bits Mobile RAM
EDL1216CASA-10	ETC	获取价格	SDRAM\|4X2MX16\|CMOS\|BGA\|54PIN\|PLASTIC
EDL1216CASA-10-E	ELPIDA	获取价格	128M bits Mobile RAM
EDL1216CASA-10L-E	ELPIDA	获取价格	Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54
EDL1216CFBJ	ELPIDA	获取价格	128M bits Mobile RAM™
EDL1216CFBJ-75-F	ELPIDA	获取价格	128M bits Mobile RAM™

与EDL1216AASA相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

45
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

34
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

62
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

59

产品中心

服务支持

精选活动

关于我们

帮助中心

EDL1216AASA

EDL1216AASA 数据手册

与EDL1216AASA相关器件

与EDL1216AASA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

EDL1216AASA

EDL1216AASA 数据手册

与EDL1216AASA相关器件

与EDL1216AASA相关文章

您还可以找

您在本页遇到什么问题？