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EDL1216CFBJ PDF预览

EDL1216CFBJ

更新时间: 2024-11-04 06:55:55
品牌 Logo 应用领域
尔必达 - ELPIDA /
页数 文件大小 规格书
59页 699K
描述
128M bits Mobile RAM™

EDL1216CFBJ 数据手册

 浏览型号EDL1216CFBJ的Datasheet PDF文件第2页浏览型号EDL1216CFBJ的Datasheet PDF文件第3页浏览型号EDL1216CFBJ的Datasheet PDF文件第4页浏览型号EDL1216CFBJ的Datasheet PDF文件第5页浏览型号EDL1216CFBJ的Datasheet PDF文件第6页浏览型号EDL1216CFBJ的Datasheet PDF文件第7页 
PRELIMINARY DATA SHEET  
128M bits Mobile RAM  
EDL1216CFBJ (8M words × 16 bits)  
Specifications  
Pin Configurations  
Density: 128M bits  
/xxx indicates active low signal.  
Organization: 2M words × 16 bits × 4 banks  
60-ball FBGA  
Package: 60-ball FBGA  
1
2
3
4
5
6
7
8
9
10  
Lead-free (RoHS compliant) and Halogen-free  
Power supply: VDD, VDDQ = 1.7V to 1.95V  
Clock frequency: 133MHz (max.)  
1KB page size  
Row address: A0 to A11  
Column address: A0 to A8  
Four internal banks for concurrent operation  
Interface: LVCMOS  
Burst lengths (BL): 1, 2, 4, 8, full page  
Burst type (BT):  
A
B
C
D
E
F
VDDQ DQ0 VDD  
DQ1 DQ2 VSSQ  
DQ3 DQ4 VDDQ  
DQ5 DQ6 VSSQ  
DQ7  
VSS DQ15 VSSQ  
DQ13 DQ14  
VDDQ  
VSSQ DQ11  
VDDQ DQ9  
DQ12  
DQ10  
NC  
NC  
NC DQ8  
NC  
Sequential (1, 2, 4, 8, full page)  
Interleave (1, 2, 4, 8)  
/CAS Latency (CL): 3  
NC LDQM  
VDD  
/RAS  
NC  
UDQM  
VSS  
CKE  
A9  
G
H
J
/CAS  
/WE  
CLK NC  
Precharge: auto precharge option for each burst  
/CS BA0  
A11  
A7  
BA1  
A1  
NC  
A8  
A5  
access  
Driver strength: normal/weak  
Refresh: auto-refresh, self-refresh  
Refresh cycles: 4096 cycles/64ms  
Average refresh period: 15.6µs  
Operating ambient temperature range  
TA = –25°C to +85°C  
A10/AP A0  
A6  
K
A4  
VSS  
A3  
A2  
VDD  
(Top view)  
A0 to A11  
BA0, BA1  
Address inputs  
Bank select  
DQ0 to DQ15 Data inputs/ outputs  
Features  
CLK  
Clock input  
CKE  
/CS  
/RAS  
/CAS  
/WE  
Clock enable  
Chip select  
Row address strobe  
Column address strobe  
Write enable  
Low power consumption  
Single pulsed /RAS  
Burst read/write operation capability  
Byte control by DQM  
Programmable Partial Array Self-Refresh  
UDQM  
LDQM  
VDD  
VSS  
VDDQ  
VSSQ  
NC  
Upper DQ mask enable  
Lower DQ mask enable  
Power supply  
Ground  
Power supply for DQ  
Ground for DQ  
Auto Temperature Compensated Self-Refresh  
(ATCSR) by built-in temperature sensor  
Burst termination by burst stop command and  
Precharge command  
No connection  
Document No. E1137E51 (Ver. 5.1)  
Date Published August 2008 (K) Japan  
Printed in Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2007-2008  

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