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EDL1216BASA-75-E PDF预览

EDL1216BASA-75-E

更新时间: 2024-11-04 20:01:35
品牌 Logo 应用领域
尔必达 - ELPIDA 时钟动态存储器内存集成电路
页数 文件大小 规格书
2页 31K
描述
Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54, LEAD FREE, FBGA-54

EDL1216BASA-75-E 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.84访问模式:FOUR BANK PAGE BURST
最长访问时间:5.4 ns其他特性:AUTO/SELF REFRESH
最大时钟频率 (fCLK):133 MHzI/O 类型:COMMON
交错的突发长度:1,2,4,8JESD-30 代码:S-PBGA-B54
JESD-609代码:e1长度:8 mm
内存密度:134217728 bit内存集成电路类型:SYNCHRONOUS DRAM
内存宽度:16功能数量:1
端口数量:1端子数量:54
字数:8388608 words字数代码:8000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-25 °C组织:8MX16
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:VFBGA封装等效代码:BGA54,9X9,32
封装形状:SQUARE封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH
峰值回流温度(摄氏度):260电源:2.5 V
认证状态:Not Qualified刷新周期:4096
座面最大高度:1 mm自我刷新:YES
连续突发长度:1,2,4,8,FP最大待机电流:0.00001 A
子类别:DRAMs最大压摆率:0.155 mA
最大供电电压 (Vsup):2.7 V最小供电电压 (Vsup):2.3 V
标称供电电压 (Vsup):2.5 V表面贴装:YES
技术:CMOS温度等级:OTHER
端子面层:Tin/Silver/Copper (Sn/Ag/Cu)端子形式:BALL
端子节距:0.8 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:8 mm
Base Number Matches:1

EDL1216BASA-75-E 数据手册

 浏览型号EDL1216BASA-75-E的Datasheet PDF文件第2页 
Mobile RAM  
http://www.elpida.com  
Description  
Elpida Memory has unveiled a new family of synchronous DRAM, “Mobile RAM”.  
Mobile RAM achieves low power consumption via three special low power functions, and extends the battery  
life in mobile applications. Additional advantages of Mobile RAM are that it saves space in the system by the  
adoption of a 54-ball FBGA (Fine-pitch Ball Grid Array) package, and that it offers a high-speed data transfer  
rate using pipeline architecture.  
Mobile RAM contributes to a better environment by adopting lead-free solder balls.  
Suitable Applications  
Pin Configuration (54-ball FBGA)  
Top View  
Mobile cellular handset  
PDA, wireless PDA  
Handheld PC  
1
2
3
4
5
6
7
8
9
A0 to A11  
BA0, BA1  
: Address inputs  
: Bank select  
A
B
C
D
E
F
VSS DQ15 VSSQ  
DQ14 DQ13 VDDQ  
DQ12 DQ11 VSSQ  
DQ10 DQ9 VDDQ  
VDDQ DQ0 VDD  
VSSQ DQ2 DQ1  
VDDQ DQ4 DQ3  
VSSQ DQ6 DQ5  
VDD LDQM DQ7  
/CAS /RAS /WE  
BA0 BA1 /CS  
DQ0 to DQ15 : Data inputs/outputs  
CLK  
: Clock input  
CKE  
: Clock enable  
Digital still camera  
Digital camcorder  
and more…  
/CS  
: Chip select  
/RAS  
/CAS  
/WE  
: Row address strobe  
: Column address strobe  
: Write enable  
DQ8 NC  
VSS  
UDQM  
LDQM  
VDD  
VSS  
: Upper DQ mask enable  
: Lower DQ mask enable  
: Supply voltage  
: Ground  
UDQM CLK CKE  
G
H
J
NC  
A8  
A11  
A7  
A9  
A6  
A4  
VDDQ  
VSSQ  
NC  
: Supply voltage for DQ  
: Ground for DQ  
: No connect  
A0  
A3  
A1  
A10  
VSS  
A5  
A2 VDD  
8.0mm  
Product Lineup and Production Status  
Self  
Refresh  
Current  
Supply  
Voltage  
for DQ  
(V)  
Maximum  
Clock  
Frequency  
(MHz)  
Supply  
Voltage  
(V)  
Density  
(bits) (words × bits × banks)  
Organization  
Sample  
Status  
Part Number  
(µA (MAX.))  
2.5 ± 0.2  
2.5 ± 0.2  
1.8 ± 0.15  
1.8 ± 0.15  
2.5 ± 0.2  
1.8 ± 0.15  
133  
133  
100  
EDL1216AASA-75-E  
EDL1216BASA-75-E  
EDL1216CASA-75-E  
Now  
128M  
2M × 16 × 4  
350  
available  
Document No. E0188E40 (Ver.4.0)  
Date Published June 2002 (K) Japan  
© Elpida Memory, Inc. 2001-2002  

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