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EDL1216CASA-10L-E PDF预览

EDL1216CASA-10L-E

更新时间: 2024-11-04 13:07:35
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路动态存储器时钟
页数 文件大小 规格书
59页 460K
描述
Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54, LEAD FREE, FBGA-54

EDL1216CASA-10L-E 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:BGA包装说明:VFBGA, BGA54,9X9,32
针数:54Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.35Is Samacsys:N
访问模式:FOUR BANK PAGE BURST最长访问时间:6 ns
其他特性:AUTO/SELF REFRESH最大时钟频率 (fCLK):100 MHz
I/O 类型:COMMON交错的突发长度:1,2,4,8
JESD-30 代码:S-PBGA-B54JESD-609代码:e1
长度:8 mm内存密度:134217728 bit
内存集成电路类型:SYNCHRONOUS DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:54字数:8388608 words
字数代码:8000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-25 °C
组织:8MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:VFBGA
封装等效代码:BGA54,9X9,32封装形状:SQUARE
封装形式:GRID ARRAY, VERY THIN PROFILE, FINE PITCH峰值回流温度(摄氏度):260
电源:1.8 V认证状态:Not Qualified
刷新周期:4096座面最大高度:1 mm
自我刷新:YES连续突发长度:1,2,4,8,FP
最大待机电流:0.00001 A子类别:DRAMs
最大压摆率:0.13 mA最大供电电压 (Vsup):1.95 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
温度等级:OTHER端子面层:Tin/Silver/Copper (Sn/Ag/Cu)
端子形式:BALL端子节距:0.8 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:8 mmBase Number Matches:1

EDL1216CASA-10L-E 数据手册

 浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第2页浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第3页浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第4页浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第5页浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第6页浏览型号EDL1216CASA-10L-E的Datasheet PDF文件第7页 
DATA SHEET  
128M bits Mobile RAM  
EDL1216CASA (8M words × 16 bits)  
Description  
Pin Configurations  
The EDL1216CA is a 128M bits Mobile RAM organized  
as 2,097,152 words × 16 bits × 4 banks. The Mobile  
RAM achieved low power consumption and high-speed  
data transfer using the pipeline architecture. All inputs  
and outputs are synchronized with the positive edge of  
the clock.  
/xxx indicates active low signal.  
54-ball FBGA ( BGA)  
1
2
3
4
5
6
7
8
9
A
B
C
D
E
F
VSS DQ15 VSSQ  
DQ14 DQ13 VDDQ  
DQ12 DQ11 VSSQ  
DQ10 DQ9 VDDQ  
VDDQ DQ0  
VSSQ DQ2  
VDDQ DQ4  
VSSQ DQ6  
VDD  
DQ1  
DQ3  
DQ5  
This product is packaged in 54-ball FBGA (µBGA ).  
Features  
Low voltage power supply  
VDD:  
1.8V ± 0.15V  
VDDQ: 1.8V ± 0.15V  
Wide temperature range (25°C to 85°C)  
Programmable partial self refresh  
Programmable driver strength  
DQ8  
NC  
VSS  
CKE  
A9  
VDD LDQM DQ7  
/CAS /RAS /WE  
UDQM CLK  
Programmable temperature compensated self refresh  
(Option)  
G
H
J
NC  
A8  
A11  
A7  
BA0  
A0  
BA1  
A1  
/CS  
A10  
VDD  
Deep power down mode  
Small package (54-ball FBGA (µBGA))  
A6  
Fully Synchronous Dynamic RAM, with all signals  
referenced to a positive clock edge  
VSS  
A5  
A4  
A3  
A2  
Pulsed interface  
(Top view)  
Possible to assert random column address in every  
cycle  
A0 to A11  
BA0, BA1  
Address inputs  
Bank select  
Quad internal banks controlled by BA0 and BA1  
Byte control by LDQM and UDQM  
Wrap sequence = Sequential/ Interleave  
/CAS latency (CL) = 2, 3  
DQ0 to DQ15  
CLK  
Data inputs/ outputs  
Clock input  
CKE  
Clock enable  
/CS  
Chip select  
Automatic precharge and controlled precharge  
Auto refresh and self refresh  
/RAS  
/CAS  
/WE  
Row address strobe  
Column address strobe  
Write enable  
• ×16 organization  
4,096 refresh cycles/64ms  
UDQM  
LDQM  
VDD  
Upper DQ mask enable  
Lower DQ mask enable  
Power supply  
Burst termination by Burst stop command and  
Precharge command  
FBGA(µBGA) package is lead free solder (Sn-Ag-Cu)  
VSS  
Ground  
Applications  
VDDQ  
VSSQ  
NC  
Power supply for DQ  
Ground for DQ  
No connection  
Mobile cellular handsets, PDAs, wireless PDAs,  
handheld PCs, home electronic appliances, and  
information appliances, etc.  
Document No. E0195E30 (Ver. 3.0)  
Date Published June 2002 (K) Japan  
URL: http://www.elpida.com  
Elpida Memory, Inc. 2001-2002  

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