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DSA340200L PDF预览

DSA340200L

更新时间: 2024-11-05 21:21:47
品牌 Logo 应用领域
松下 - PANASONIC 放大器光电二极管晶体管
页数 文件大小 规格书
4页 761K
描述
Small Signal Bipolar Transistor, 0.5A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PIN

DSA340200L 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:HALOGEN FREE AND ROHS COMPLIANT, SSSMINI3-F2-B, SC-105AA, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.21.00.75
风险等级:3.9最大集电极电流 (IC):0.5 A
集电极-发射极最大电压:12 V配置:SINGLE
最小直流电流增益 (hFE):270JESD-30 代码:R-PDSO-F3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:PNP表面贴装:YES
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:AMPLIFIER
晶体管元件材料:SILICON标称过渡频率 (fT):300 MHz
Base Number Matches:1

DSA340200L 数据手册

 浏览型号DSA340200L的Datasheet PDF文件第2页浏览型号DSA340200L的Datasheet PDF文件第3页浏览型号DSA340200L的Datasheet PDF文件第4页 
DSA3402  
Silicon PNP epitaxial planar type  
Unit: mm  
For low frequency amplification  
DSA9402 in SSSMini3 type package  
Features  
High forward current transfer ratio hFE with excellent linearity  
Low collector-emitter saturation voltage VCE(sat)  
Halogen-free / RoHS compliant  
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)  
Marking Symbol: B2  
Packaging  
DSA340200L Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)  
1: Base  
2: Emitter  
3: Collector  
Panasonic  
JEITA  
Absolute Maximum Ratings Ta = 25°C  
Parameter  
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector current  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
–15  
Unit  
V
SSSMini3-F2-B  
SC-105AA  
SOT-723  
–12  
V
Code  
–5  
V
–500  
mA  
A
Peak collector current  
ICP  
–1  
Collector power dissipation  
Junction temperature  
PC  
100  
mW  
°C  
°C  
°C  
Tj  
150  
Operating ambient temperature  
Storage temperature  
Topr  
–40 to +85  
–55 to +150  
T
stg  
Electrical Characteristics Ta = 25°C±3°C  
Parameter  
Symbol  
Conditions  
Min  
–15  
–12  
–5  
Typ  
Max  
Unit  
V
Collector-base voltage (Emitter open)  
Collector-emitter voltage (Base open)  
Emitter-base voltage (Collector open)  
Collector-base cutoff current (Emitter open)  
Forward current transfer ratio  
VCBO IC = –10 mA, IE = 0  
VCEO IC = –1 mA, IB = 0  
VEBO IE = –10 mA, IC = 0  
V
V
ICBO  
hFE  
VCB = –10 V, IE = 0  
– 0.1  
680  
mA  
VCE = –2 V, IC = –10 mA  
270  
Collector-emitter saturation voltage  
Transition frequency  
VCE(sat) IC = –200 mA, IB = –10 mA  
–250  
mV  
MHz  
fT  
VCE = –2 V, IC = –10 mA  
300  
4.0  
Collector output capacitance  
Cob  
VCB = –10 V, IE = 0, f = 1 MHz  
pF  
(Common base, input open circuited)  
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.  
Publication date: March 2014  
Ver. CED  
1

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