Datasheet > DS1218+

DS1218+

更新时间： 2024-02-28 03:06:12

品牌	Logo	应用领域
美信 - MAXIM		光电二极管
页数	文件大小	规格书
7页	305K
描述
Power Supply Management Circuit, Fixed, 2 Channel, CMOS, PDIP8, MINI, DIP-8

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技术参数
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DS1218+ 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Active	零件包装代码：	DIP
包装说明：	DIP,	针数：	8
Reach Compliance Code：	unknown	风险等级：	5.17
Is Samacsys：	N	可调阈值：	NO
模拟集成电路 - 其他类型：	POWER SUPPLY MANAGEMENT CIRCUIT	JESD-30 代码：	R-PDIP-T8
JESD-609代码：	e3	长度：	9.375 mm
湿度敏感等级：	1	信道数量：	2
功能数量：	1	端子数量：	8
最高工作温度：	70 °C	最低工作温度：
封装主体材料：	PLASTIC/EPOXY	封装代码：	DIP
封装形状：	RECTANGULAR	封装形式：	IN-LINE
峰值回流温度（摄氏度）：	260	座面最大高度：	4.572 mm
最大供电电压 (Vsup)：	5.5 V	最小供电电压 (Vsup)：	4.5 V
标称供电电压 (Vsup)：	5 V	表面贴装：	NO
技术：	CMOS	温度等级：	COMMERCIAL
端子面层：	MATTE TIN	端子形式：	THROUGH-HOLE
端子节距：	2.54 mm	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	7.62 mm
Base Number Matches：	1

DS1218+ 数据手册

19-6295; Rev 6/12

DS1218

Nonvolatile Controller

FEATURES

PIN ASSIGNMENT

. Converts CMOS RAM into nonvolatile

memories

V_CCO

V_CCI

. Unconditionally write protects when V_CCis

out of tolerance

. Automatically switches to battery when

power fail occurs

V_BAT

CEO

CEI

GND

. Space saving 8-pin PDIP or 8-pin 150 mil SO

Packages

. Consumes less than 100nA of battery current

PIN DESCRIPTION

V_CCI

- Input +5 Volt Supply

V_CCO

- RAM Power (V_CC) Supply

CEI

- Chip Enable Input

- No Connection

CEO

- Chip Enable Output

- + Battery

- Ground

V_BAT

GND

DESCRIPTION

The DS1218 is a CMOS circuit which solves the application problems of converting CMOS RAM into

nonvolatile memory. Incoming power is monitored for an out-of-tolerance condition. When such a

condition is detected, the chip enable output is inhibited to accomplish write protection and the battery is

switched on to supply RAM with uninterrupted power. Special circuitry uses a low-leakage CMOS

process which affords precise voltage detection at extremely low battery consumption. The 8-pin package

keeps PC board real estate requirements to a minimum. By combining the DS1218 nonvolatile controller

chip with a full CMOS memory and lithium batteries, 10 years of nonvolatile RAM operation can be

achieved.

OPERATION

The DS1218 Nonvolatile Controller performs the circuit functions required to battery back-up a RAM.

First, a switch is provided to direct power from the battery or V_CCIsupply, depending on which is greater.

This switch has a voltage drop of less than 0.2V. The second function which the nonvolatile controller

provides is power-fail detection. The DS1218 constantly monitors the V_CCsupply. When V_CCIfalls to

1.26 times the battery voltage, a precision comparator outputs a power-fail detect signal to the chip enable

logic. The third function of write protection is accomplished by holding the chip enable output signal to

within 0.2V of the V_CCIor battery supply, when a power-fail condition is detected.

During nominal supply conditions, the chip enable output will follow chip enable input with a maximum

propagation delay of 10 ns.

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与DS1218+相关器件

型号	品牌	获取价格	描述	数据表
DS1218S	DALLAS	获取价格	Nonvolatile Controller
DS1218S/T&R	MAXIM	获取价格	Power Supply Management Circuit, Fixed, 2 Channel, CMOS, PDSO8, 0.150 INCH, SOIC-8
DS1218S+	MAXIM	获取价格	Power Supply Management Circuit, Fixed, 2 Channel, CMOS, PDSO8, 0.150 INCH, SOIC-8
DS1218S+T&R	MAXIM	获取价格	Power Supply Management Circuit, Fixed, 2 Channel, CMOS, PDSO8, 0.150 INCH, SOIC-8
DS1220	DALLAS	获取价格	16k Nonvolatile SRAM
DS1220	TTELEC	获取价格	Platon Metal Tube GMT Flanged VA Flow Meter
DS1220AB	DALLAS	获取价格	16k Nonvolatile SRAM
DS1220AB	ADI	获取价格	16k非易失SRAM
DS1220AB/AD	ETC	获取价格	16k Nonvolatile SRAM
DS1220AB_10	DALLAS	获取价格	16k Nonvolatile SRAM

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