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DS1220AB-200IND+ PDF预览

DS1220AB-200IND+

更新时间: 2024-01-09 14:35:27
品牌 Logo 应用领域
美信 - MAXIM 静态存储器内存集成电路
页数 文件大小 规格书
8页 188K
描述
Non-Volatile SRAM Module, 2KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24

DS1220AB-200IND+ 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Active零件包装代码:DMA
包装说明:DIP, DIP24,.6针数:24
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8473.30.11.40Factory Lead Time:9 weeks
风险等级:5.28Is Samacsys:N
最长访问时间:200 nsJESD-30 代码:R-XDMA-P24
JESD-609代码:e3内存密度:16384 bit
内存集成电路类型:NON-VOLATILE SRAM MODULE内存宽度:8
功能数量:1端子数量:24
字数:2048 words字数代码:2000
工作模式:ASYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:2KX8
封装主体材料:UNSPECIFIED封装代码:DIP
封装等效代码:DIP24,.6封装形状:RECTANGULAR
封装形式:MICROELECTRONIC ASSEMBLY并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified最大待机电流:0.01 A
子类别:SRAMs最大压摆率:0.085 mA
最大供电电压 (Vsup):5.25 V最小供电电压 (Vsup):4.75 V
标称供电电压 (Vsup):5 V表面贴装:NO
技术:CMOS温度等级:INDUSTRIAL
端子面层:MATTE TIN端子形式:PIN/PEG
端子节距:2.54 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

DS1220AB-200IND+ 数据手册

 浏览型号DS1220AB-200IND+的Datasheet PDF文件第2页浏览型号DS1220AB-200IND+的Datasheet PDF文件第3页浏览型号DS1220AB-200IND+的Datasheet PDF文件第4页浏览型号DS1220AB-200IND+的Datasheet PDF文件第5页浏览型号DS1220AB-200IND+的Datasheet PDF文件第6页浏览型号DS1220AB-200IND+的Datasheet PDF文件第7页 
19-5580; Rev 10/10  
DS1220AB/AD  
16k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 10 years minimum data retention in the  
absence of external power  
A7  
VCC  
24  
23  
1
A6  
A5  
A4  
A8  
A9  
2
3
4
. Data is automatically protected during power  
loss  
. Directly replaces 2k x 8 volatile static RAM  
or EEPROM  
. Unlimited write cycles  
. Low-power CMOS  
. JEDEC standard 24-pin DIP package  
. Read and write access times of 100 ns  
. Lithium energy source is electrically  
disconnected to retain freshness until power  
is applied for the first time  
22  
21  
WE  
OE  
A10  
CE  
A3  
A2  
20  
19  
5
6
A1  
A0  
18  
17  
7
8
DQ7  
DQ6  
DQ0  
9
16  
DQ1  
DQ2  
GND  
10  
DQ5  
DQ4  
DQ3  
15  
14  
11  
12  
13  
24-Pin ENCAPSULATED PACKAGE  
720-mil EXTENDED  
. Full ±10% VCC operating range (DS1220AD)  
. Optional ±5% VCC operating range  
(DS1220AB)  
. Optional industrial temperature range of  
-40°C to +85°C, designated IND  
PIN DESCRIPTION  
A0-A10  
- Address Inputs  
DQ0-DQ7  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
CE  
WE  
- Output Enable  
- Power (+5V)  
- Ground  
OE  
VCC  
GND  
DESCRIPTION  
The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs  
organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and  
control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a condition  
occurs, the lithium energy source is automatically switched on and write protection is unconditionally  
enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs  
directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of  
the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.  
There is no limit on the number of write cycles that can be executed and no additional support circuitry is  
required for microprocessor interfacing.  
1 of 8  

DS1220AB-200IND+ 替代型号

型号 品牌 替代类型 描述 数据表
DS1220AD-200IND+ MAXIM

类似代替

Non-Volatile SRAM Module, 2KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24
DS1220AD-200+ MAXIM

类似代替

Non-Volatile SRAM Module, 2KX8, 200ns, CMOS, 0.720 INCH, ROHS COMPLIANT, PLASTIC, DIP-24

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