Datasheet > DS1220AB_10

DS1220AB_10

更新时间： 2022-10-27 11:39:25

品牌	Logo	应用领域
达拉斯 - DALLAS		静态存储器
页数	文件大小	规格书
8页	188K
描述
16k Nonvolatile SRAM

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数据手册

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DS1220AB_10 数据手册

19-5580; Rev 10/10

DS1220AB/AD

16k Nonvolatile SRAM

www.maxim-ic.com

FEATURES

PIN ASSIGNMENT

. 10 years minimum data retention in the

absence of external power

VCC

. Data is automatically protected during power

loss

. Directly replaces 2k x 8 volatile static RAM

or EEPROM

. Unlimited write cycles

. Low-power CMOS

. JEDEC standard 24-pin DIP package

. Read and write access times of 100 ns

. Lithium energy source is electrically

disconnected to retain freshness until power

is applied for the first time

A10

DQ7

DQ6

DQ0

DQ1

DQ2

GND

DQ5

DQ4

DQ3

24-Pin ENCAPSULATED PACKAGE

720-mil EXTENDED

. Full ±10% V_CCoperating range (DS1220AD)

. Optional ±5% V_CCoperating range

(DS1220AB)

. Optional industrial temperature range of

-40°C to +85°C, designated IND

PIN DESCRIPTION

A0-A10

- Address Inputs

DQ0-DQ7

- Data In/Data Out

- Chip Enable

- Write Enable

- Output Enable

- Power (+5V)

- Ground

V_CC

GND

DESCRIPTION

The DS1220AB and DS1220AD 16k Nonvolatile SRAMs are 16,384-bit, fully static, nonvolatile SRAMs

organized as 2048 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and

control circuitry which constantly monitors V_CCfor an out-of-tolerance condition. When such a condition

occurs, the lithium energy source is automatically switched on and write protection is unconditionally

enabled to prevent data corruption. The NV SRAMs can be used in place of existing 2k x 8 SRAMs

directly conforming to the popular bytewide 24-pin DIP standard. The devices also match the pinout of

the 2716 EPROM and the 2816 EEPROM, allowing direct substitution while enhancing performance.

There is no limit on the number of write cycles that can be executed and no additional support circuitry is

required for microprocessor interfacing.

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