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DN3525 PDF预览

DN3525

更新时间: 2024-11-15 14:53:39
品牌 Logo 应用领域
美国微芯 - MICROCHIP /
页数 文件大小 规格书
14页 1524K
描述
DN3525 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical D

DN3525 数据手册

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DN3525  
N-Channel Depletion-Mode Vertical DMOS FET  
Features  
General Description  
• High Input Impedance  
The DN3525 is a low-threshold Depletion-mode  
(normally-on) transistor that uses an advanced vertical  
DMOS structure and a well-proven silicon gate  
manufacturing process. This combination produces a  
device with the power handling capabilities of bipolar  
transistors and the high input impedance and positive  
temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, this device is free  
from thermal runaway and thermally induced  
secondary breakdown.  
• Low Input Capacitance  
• Fast Switching Speeds  
• Low On-Resistance  
• Free from Secondary Breakdown  
• Low Input and Output Leakage  
Applications  
• Normally-On Switches  
• Solid-State Relays  
Microchip’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications  
where high breakdown voltage, high input impedance,  
low input capacitance and fast switching speeds are  
desired.  
• Converters  
• Constant-Current Sources  
• Power Supply Circuits  
Telecommunication Switches  
Package Type  
3-lead SOT-89  
(Top view)  
DRAIN  
SOURCE  
DRAIN  
GATE  
See Table 3-1 for pin information.  
2018 Microchip Technology Inc.  
DS20005705A-page 1  

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