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DN3545N3-G PDF预览

DN3545N3-G

更新时间: 2024-11-14 03:04:19
品牌 Logo 应用领域
超科 - SUPERTEX 晶体小信号场效应晶体管开关输入元件PC
页数 文件大小 规格书
6页 485K
描述
N-Channel Depletion-Mode Vertical DMOS FET

DN3545N3-G 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-92
包装说明:CYLINDRICAL, O-PBCY-W3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.21.00.95风险等级:7.9
Is Samacsys:N其他特性:HIGH INPUT IMPEDANCE
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:450 V
最大漏极电流 (ID):0.136 A最大漏源导通电阻:20 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):15 pF
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-W3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:DEPLETION MODE
最高工作温度:150 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL功耗环境最大值:0.74 W
最大功率耗散 (Abs):0.74 W认证状态:Not Qualified
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:WIRE端子位置:BOTTOM
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

DN3545N3-G 数据手册

 浏览型号DN3545N3-G的Datasheet PDF文件第2页浏览型号DN3545N3-G的Datasheet PDF文件第3页浏览型号DN3545N3-G的Datasheet PDF文件第4页浏览型号DN3545N3-G的Datasheet PDF文件第5页浏览型号DN3545N3-G的Datasheet PDF文件第6页 
DN3545  
N-Channel Depletion-Mode  
Vertical DMOS FET  
Features  
General Description  
These depletion-mode (normally-on) transistors utilize an  
advanced vertical DMOS structure and Supertex’s well-  
proven silicon-gate manufacturing process. This combination  
produces devices with the power handling capabilities of  
bipolar transistors and with the high input impedance and  
positive temperature coefficient inherent in MOS devices.  
Characteristic of all MOS structures, these devices are free  
from thermal runaway and thermally-induced secondary  
breakdown.  
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Applications  
Supertex’s vertical DMOS FETs are ideally suited to a  
wide range of switching and amplifying applications where  
high breakdown voltage, high input impedance, low input  
capacitance, and fast switching speeds are desired.  
Normally-on switches  
Solid state relays  
Converters  
Linear amplifiers  
Constant current sources  
Power supply circuits  
Telecom  
Absolute Maximum Ratings  
Parameter  
Package Options  
D
Value  
BVDSX  
BVDGX  
±±2V  
Drain-to-source voltage  
Drain-to-gate voltage  
Gate-to-source voltage  
Operating and storage  
-55OC to +152OC  
322OC  
temperature  
Soldering temperature*  
S G D  
G
S
D
Absolute Maximum Ratings are those values beyond which damage to the device  
may occur. Functional operation under these conditions is not implied. Continuous  
operation of the device at the absolute rating level may affect device reliability. All  
voltages are referenced to device ground.  
TO-92  
TO-243AA  
(front view)  
(top view)  
*Distance of 1.6mm from case for 10 seconds.  
Ordering Information  
Package Options  
TO-243AA (SOT-89)  
BVDSX  
/
RDS(ON)  
IDSS  
(max)  
(min)  
BVDGX  
TO-92  
DN3545N3  
DN3545N8  
452V  
±2Ω  
±22mA  
DN3545N3-G  
DN3545N8-G  
-G indicates package is RoHS compliant (‘Green’)  

DN3545N3-G 替代型号

型号 品牌 替代类型 描述 数据表
BS170 ONSEMI

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Small Signal MOSFET Small Signal MOSFET Small Signal MOSFET

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