Datasheet > DN3525_07

DN3525_07

更新时间： 2024-11-14 03:30:11

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	462K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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DN3525_07 数据手册

DN3525

N-Channel Depletion-Mode Vertical DMOS FETs

Features

General Description

The Supertex DN3525 is a low threshold depletion-mode

(normally-on) transistor utilizing an advanced vertical

DMOS structure and Supertex’s well-proven silicon-gate

manufacturing process. This combination produces a device

with the power handling capabilities of bipolar transistors

and with the high input impedance and positive temperature

coefﬁcient inherent in MOS devices. Characteristic of all

MOS structures, this device is free from thermal runaway and

thermally-induced secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Normally-on switches

► Solid state relays

► Converters

► Constant current sources

► Power supply circuits

► Telecom

Product marking for TO-243AA:

DN5C

where = 2-week alpha date code

Ordering Information

Package Options

TO-243AA¹

BV_DSX

R_DS(ON)

I_DSS

(max)

(min)

BV_DGX

DN3525N8

25ꢀV

6.ꢀΩ

3ꢀꢀmA

DN3525N8-G

-G indicates package is RoHS compliant (‘Green’)

Notes: ¹Same as SOT-89.

Absolute Maximum Ratings

Parameter

Pin Conﬁguration

Value

BV_DSX

BV_DGX

2ꢀV

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage temperature

Soldering temperature*

-55^OC to +15ꢀ^OC

3ꢀꢀ^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-243AA

(top view)

*Distance of 1.6mm from case for 10 seconds.

12 3 4 5

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与DN3525_07相关器件

型号	品牌	获取价格	描述	数据表
DN3525N8	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3525N8-G	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3525ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.36A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN3525NW	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3535	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3535_07	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3535N8	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3535N8-G	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3535ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN3535NW	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs