Datasheet > DN3535N8-G

DN3535N8-G

更新时间： 2024-11-14 03:04:19

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
5页	440K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

DN3535N8-G 数据手册

DN3535

N-Channel Depletion-Mode Vertical DMOS FETs

Features

General Description

This low threshold depletion-mode (normally-on) transistor

utilizes an advanced vertical DMOS structure and Supertex’s

well-proven silicon-gate manufacturing process. This

combination produces a device with the power handling

capabilities of bipolar transistors and with the high input

impedance and positive temperature coefﬁcient inherent

in MOS devices. Characteristic of all MOS structures, this

device is free from thermal runaway and thermally-induced

secondary breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Normally-on switches

► Solid state relays

► Converters

► Linear ampliﬁers

► Constant current sources

► Power supply circuits

► Telecom

Ordering Information

Package Options

TO-243AA¹

BV_DSX

R_DS(ON)

(max)

I_DSS

BV_DGX

(min)

DN3535N8

352V

12Ω

±22mA

DN3535N8-G

-G indicates package is RoHS compliant (‘Green’)

¹Same as SOT-89. Products shipped on 2000 piece carrier tape reels.

Package Option

Absolute Maximum Ratings

Parameter

Value

BV_DSX

BV_DGX

±±2V

Drain-to-source voltage

Drain-to-gate voltage

Gate-to-source voltage

Operating and storage

temperature

-55^OC to +152^OC

Soldering temperature*

322^OC

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

TO-243AA

(top view)

*Distance of 1.6mm from case for 10 seconds.

12 3 4 5

中文翻译

下载PDF

与DN3535N8-G相关器件

型号	品牌	获取价格	描述	数据表
DN3535ND	SUPERTEX	获取价格	Small Signal Field-Effect Transistor, 0.23A I(D), 1-Element, N-Channel, Silicon, Metal-oxi
DN3535NW	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3545	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3545	MICROCHIP	获取价格	These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure
DN3545_07	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FET
DN3545N3	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FETs
DN3545N3-G	SUPERTEX	获取价格	N-Channel Depletion-Mode Vertical DMOS FET
DN3545N3-GP002	MICROCHIP	获取价格	SMALL SIGNAL, FET
DN3545N3-GP003	MICROCHIP	获取价格	SMALL SIGNAL, FET
DN3545N3-GP005	MICROCHIP	获取价格	SMALL SIGNAL, FET