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DN3545N8 PDF预览

DN3545N8

更新时间： 2024-11-13 22:29:43
品牌 Logo 应用领域
超科 - SUPERTEX /
页数 文件大小 规格书
4页 104K
描述
N-Channel Depletion-Mode Vertical DMOS FETs

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中文翻译

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DN3545N8 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
零件包装代码：SOT-89包装说明：N8, 3 PIN
针数：3Reach Compliance Code：unknown
ECCN代码：EAR99风险等级：5.23
其他特性：HIGH INPUT IMPEDANCE外壳连接：DRAIN
配置：SINGLE WITH BUILT-IN DIODE最小漏源击穿电压：450 V
最大漏极电流 (ID)：0.2 A最大漏源导通电阻：20 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-243AA
JESD-30 代码：R-PSSO-F3JESD-609代码：e0
元件数量：1端子数量：3
工作模式：DEPLETION MODE最高工作温度：150 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：1.6 W
最大脉冲漏极电流 (IDM)：0.55 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：YES
端子面层：Tin/Lead (Sn/Pb)端子形式：FLAT
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

DN3545N8 数据手册

 浏览型号DN3545N8的Datasheet PDF文件第2页浏览型号DN3545N8的Datasheet PDF文件第3页浏览型号DN3545N8的Datasheet PDF文件第4页 
DN3545  
N-Channel Depletion-Mode  
Vertical DMOS FETs  
Ordering Information  
Product marking for TO-243AA:  
Order Number / Package  
BVDSX  
/
RDS(ON)  
(max)  
IDSS  
BVDGX  
(min)  
TO-92  
TO-243AA*  
Die  
DN5M❋  
450V  
20Ω  
200mA  
DN3545N3  
DN3545N8  
DN3545ND  
Where ❋ = 2-week alpha date code  
* Same as SOT-89. Product shipped on 2000 piece carrier tape reels.  
Advanced DMOS Technology  
Features  
These depletion-mode (normally-on) transistors utilize an ad-  
vanced vertical DMOS structure and Supertex’s well-proven  
silicon-gate manufacturing process. This combination produces  
devices with the power handling capabilities of bipolar transis-  
tors and with the high input impedance and positive temperature  
coefficient inherent in MOS devices. Characteristic of all MOS  
structures, these devices are free from thermal runaway and  
thermally-induced secondary breakdown.  
❏
❏
❏
❏
❏
❏
High input impedance  
Low input capacitance  
Fast switching speeds  
Low on resistance  
Free from secondary breakdown  
Low input and output leakage  
Supertex’sverticalDMOSFETsareideallysuitedtoawiderange  
of switching and amplifying applications where high breakdown  
voltage, high input impedance, low input capacitance, and fast  
switching speeds are desired.  
Applications  
❏
❏
❏
❏
❏
❏
Normally-on switches  
Solid state relays  
Converters  
Package Options  
Constant current sources  
Power supply circuits  
Telecom  
D
G
D
S
Absolute Maximum Ratings  
Drain-to-Source Voltage  
BVDSX  
BVDGX  
± 20V  
TO-243AA  
(SOT-89)  
S G D  
Drain-to-Gate Voltage  
TO-92  
Gate-to-Source Voltage  
Operating and Storage Temperature  
-55°C to +150°C  
300°C  
Soldering Temperature*  
* Distance of 1.6 mm from case for 10 seconds.  
Note: See Package Outline section for dimensions.  
12/13/01  
Supertex Inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability  
indemnification insurance agreement." Supertex does not assume responsibility for use of devices described and limits its liability to the replacement of devices determined to be defective due to  
workmanship. No responsibility is assumed for possible omissions or inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications, refer to the  
Supertex website: http://www.supertex.com. For complete liability information on all Supertex products, refer to the most current databook or to the Legal/Disclaimer page on the Supertex website.  
1234

中文翻译

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DN3545N8 替代型号

型号 品牌 替代类型 描述 数据表
DN3545N8-G SUPERTEX

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