Datasheet > DN3765

DN3765

更新时间： 2024-11-14 03:30:11

品牌	Logo	应用领域
超科 - SUPERTEX		/
页数	文件大小	规格书
3页	456K
描述
N-Channel Depletion-Mode Vertical DMOS FET

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DN3765 数据手册

DN3765

N-Channel Depletion-Mode

Vertical DMOS FET

Features

General Description

This depletion-mode (normally-on) transistor utilizes an

advanced vertical DMOS structure and Supertex’s well-

provensilicon-gatemanufacturingprocess.Thiscombination

produces a device with the power handling capabilities of

bipolar transistors and with the high input impedance and

positive temperature coefﬁcient inherent in MOS devices.

Characteristic of all MOS structures, this device is free

from thermal runaway and thermally-induced secondary

breakdown.

► High input impedance

► Low input capacitance

► Fast switching speeds

► Low on-resistance

► Free from secondary breakdown

► Low input and output leakage

Applications

Supertex’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications where

high breakdown voltage, high input impedance, low input

capacitance, and fast switching speeds are desired.

► Normally-on switches

► Solid state relays

► Converters

► Linear ampliﬁers

► Constant current sources

► Telecom

Pin Conﬁguration

Ordering Information

BV_DSX

R_DS(ON)

I_DSS

Package Option

TO-252 (D-PAK)

DN3765K4-G

BV_DGX

(V)

DRAIN

max

(Ω)

min

(mA)

652

8.2

±22

-G indicates package is RoHS compliant (‘Green’)

SOURCE

GATE

TO-252 (D-PAK) (K4)

Product Marking

Absolute Maximum Ratings

Parameter

Drain-to-source voltage

Value

BV_DSX

YY = Year Sealed

YYWW

DN3765

LLLLLLL

WW = Week Sealed

L = Lot Number

Drain-to-gate voltage

BV_DGX

= “Green” Packaging

Gate-to-source voltage

±±2V

-55^OC to +152^OC

152^OC

TO-252 (D-PAK) (K4)

Operating and storage temperature

Maximum junction temperature

Absolute Maximum Ratings are those values beyond which damage to the device

may occur. Functional operation under these conditions is not implied. Continuous

operation of the device at the absolute rating level may affect device reliability. All

voltages are referenced to device ground.

12 3

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