Datasheet > DN3765

DN3765

更新时间： 2024-11-15 14:55:07

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
12页	719K
描述
This depletion-mode (normally-on) transistor utilizes an advanced vertical DMOS structure and wel

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DN3765 数据手册

DN3765

N-Channel Depletion-Mode Vertical DMOS FET

Features

General Description

• High Input Impedance

The DN3765 is a Depletion-mode (normally-on)

transistor that uses an advanced vertical DMOS

structure and a well-proven silicon gate manufacturing

process. This combination produces a device with the

power handling capabilities of bipolar transistors and

the high input impedance and positive temperature

coefficient inherent in MOS devices. Characteristic of

all MOS structures, this device is free from thermal

runaway and thermally induced secondary breakdown.

• Low Input Capacitance

• Fast Switching Speeds

• Low On-resistance

• Free from Secondary Breakdown

• Low Input and Output Leakage

Applications

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where high breakdown voltage, high input impedance,

low input capacitance, and fast switching speeds are

desired.

• Normally-on Switches

• Solid-state Relays

• Converters

• Linear Amplifiers

• Constant Current Sources

• Telecommunications

Package Type

TO-252 (D-PAK)

(Top view)

DRAIN

SOURCE

GATE

See Table 2-1 for pin information.

 2022 Microchip Technology Inc. and its subsidiaries

DS20005813A-page 1

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